Making ferromagnetic metal MnSi ultrathin films semiconductor

De-Yong Wang,Xu Yang,Wei He,Qing-Feng Zhan,Hai-Feng Du,Hao-Liang Liu,Xiang-Qun Zhang,Zhao-Hua Cheng
DOI: https://doi.org/10.1016/j.jmmm.2021.168252
IF: 3.097
2021-11-01
Journal of Magnetism and Magnetic Materials
Abstract:<p>Atomically flat MnSi films were fabricated on Si(111)-7×7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a well-defined (<span class="math"><math>3×3</math></span>)R30<sup>o</sup> structure reconstruction. A thickness-driven metal-semiconductor transition in MnSi ultrathin films was observed with decreasing the thickness down to 6 ML (monolayers). The temperature dependence of the resistance and the negative magnetoconductivity suggest the MnSi ultrathin films with thickness lower than 6ML exhibit weak anti-localization (WAL) of two-dimensional (2D) electron systems. This finding that not only advances our understanding of the mechanism of thickness-driven metal-semiconductor transition, but also provides a new strategy to use ferromagnetic semiconductor as spin injector in spintronic devices.</p>
materials science, multidisciplinary,physics, condensed matter
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