Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Ferromagnetic MnSn Monolayer Epitaxially Grown on Silicon Substrate

Epitaxy of Mn on Si(001): Adsorption, Surface Diffusion, and Magnetic Properties Studied by Density-Functional Theory

First-Principles Study of Ferromagnetism in Epitaxial Si-Mn Thin Films on Si(001)

Epitaxial Growth of Large-Grain-size Ferromagnetic Monolayer CrI3 for Valley Zeeman Splitting Enhancement

Making ferromagnetic metal MnSi ultrathin films semiconductor

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Superconducting four-fold Fe(Te,Se) film on six-fold magnetic MnTe via hybrid symmetry epitaxy

First-principles Study of Thin Magnetic Transition-Metal Silicide Films on Si(001)

Two-Dimensional Manganese Nitride Monolayer with Room Temperature Rigid Ferromagnetism under Strain

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr 2 S 3 Nanosheets.

Ferromagnetic Resonance of Single-Crystalline La 0.67 Sr 0.33 MnO 3 Thin Film Integrated on Silicon

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Magnetotransport, spin reorientation, and anomalous ferrimagnetic-to-antiferromagnetic phase transition in epitaxial Mn 2 Sb alloy thin films

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

Predicting Intrinsic Antiferromagnetic and Ferroelastic MnF4 monolayer with Controllable Magnetization

Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films

Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

Spin-resolved Electronic Structures and Ferromagnetism in Surface-Strain-dependent MnX2 Monolayers

Epitaxial monolayers of magnetic 2D semiconductor FeBr$_{2}$ grown on Au(111)

Janus tetragonal Mn2BN monolayer: A 2D polar half-metal with coexistent ferroelectricity and magnetism