Thermoelectric Power of Nanoscale Mnsi1.7 Films

Q. R. Hou,W. Zhao,Y. B. Chen,Y. J. He
DOI: https://doi.org/10.1002/pssa.200723490
2008-01-01
Abstract:MnSi1.7 bulk materials and thin films are usually p-type. When the thickness of MnSi1.7 film is reduced to nanoscale, however, the carriers are p-type around room temperature and transform to n-type at high temperatures. The thermoelectric powers at room temperature and 633 K are 128 and -340 mu V/K, respectively. A n-type MnSi1.7 film with a thickness of about 14 nm is prepared. The thermoelectric power reaches to -967 mu V/K at 483 K. From these data, the energy band gap is estimated as 0.93 eV, which is consistent with that obtained from the temperature dependence of the electrical resistivity measurements. The large thermoelectric power may be due to the increase in the electronic density of states and energy band gap in low-dimensional semiconductors or hetero-structures being formed. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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