Abstract:N-type polycrystalline higher manganese silicide ( MnSi 1.7) films are prepared on thermally oxidized silicon substrates by magnetron sputtering. MnSi 1.85, Si , and carbon targets are used in the experiments. By co-sputtering of the MnSi 1.85 and Si targets, n-type MnSi 1.7 films are directly obtained. By increasing the Si content to the deposited films, both the Seebeck coefficient and electrical resistivity increase to high values. A Si intermediate layer between the MnSi 1.7 film and substrate plays an important role on the electrical properties of the films. Without the interlayer, the Seebeck coefficient is not stable and the electrical resistivity is higher. For preparation of MnSi 1.7 films by solid phase reaction, a sandwich structure Si / MnSi x/ Si (x < 1.7) and thermal annealing are used. A carbon cap layer is used as a doping source. With the carbon doping, the electrical resistivity of the MnSi 1.7 film decreases, while the Seebeck coefficient increases slightly. For reactive deposition, the MnSi x (x < 1.7) film is directly deposited on the heated substrate with a Si intermediate layer. By using a Si cap layer, a MnSi 1.7 film with a Seebeck coefficient of -292 μ V/K and electrical resistivity of 23 × 10-3 Ω- cm at room temperature is obtained. The power factor reaches 1636 μW/mK2 at 483 K. With such a high power factor, the n-type MnSi 1.7 material may be superior to p-type MnSi 1.7 material for the development of thermoelectric generators. Several smaller (0.036 - 0.099 eV ) and intermediate (0.10 - 0.28 eV ) activation energies are observed from the curves of logarithm of the resistivity versus reciprocal temperature. The larger activation energies (0.35 - 1.1 eV ) are consistent with the reported energy band gaps for higher manganese silicides.

Enhancement of the Thermoelectric Power Factor of MnSi 1.7 Film by Modulation Doping of Al and Cu

Enhancement Of Thermoelectric Power Factor Of Mnsi1.7 Films By Si Addition And Modulation Doping

ENHANCEMENT OF THERMOELECTRIC POWER FACTOR BY A SILICON SPACER IN MODULATION-DOPED Si-HMS-Si

Thermoelectric Effect of Silicon Films with Shallow- and Deep-Level Acceptors

Enhancement of Thermoelectric Power Factor Bysi:Baddition to Higher Manganese Silicide Film

Cu-induced Seebeck peak in HMS/Si film

Thermoelectric Properties of Mnsi1.7 Films with Addition of Aluminum and Carbon

Influence of an Interlayer on Thermoelectric Power Factor of HMS Film on Quartz Substrate

PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING

Layer-by-layer Deposition of MnSi1.7 Film with High Seebeck Coefficient and Low Electrical Resistivity

Largely Enhanced Thermoelectric Power Factor of Flexible Cu2−xS Film by Doping Mn

Enhancement Of Thermoelectric Power Factor In Crsi2 Film Via Si:B Addition

INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS

Preparation of n-type nano-scale MnSi1.7 films by addition of iron

Enhancement of the thermoelectric properties of MnSb2Se4 through Cu resonant doping

Realizing high thermoelectric performance in p-type Si 1-x-y Ge x Sn y thin films at ambient temperature by Sn modulation doping

Thermoelectric Properties of Higher Manganese Silicide Films with Addition of Chromium

High Power Factor and Thermoelectric Figure of Merit in Sb 2 Si 2 Te 6 through Synergetic Effect of Ca Doping

Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4

Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu 3 SbSe 4 ‐Based Composites

Isoelectronic Re-Ge-codoped Higher Manganese Silicides with Enhanced Thermoelectric Properties Via Band Optimization, Charge Transfer, and Phonon Scattering