Abstract:N-type polycrystalline higher manganese silicide ( MnSi 1.7) films are prepared on thermally oxidized silicon substrates by magnetron sputtering. MnSi 1.85, Si , and carbon targets are used in the experiments. By co-sputtering of the MnSi 1.85 and Si targets, n-type MnSi 1.7 films are directly obtained. By increasing the Si content to the deposited films, both the Seebeck coefficient and electrical resistivity increase to high values. A Si intermediate layer between the MnSi 1.7 film and substrate plays an important role on the electrical properties of the films. Without the interlayer, the Seebeck coefficient is not stable and the electrical resistivity is higher. For preparation of MnSi 1.7 films by solid phase reaction, a sandwich structure Si / MnSi x/ Si (x < 1.7) and thermal annealing are used. A carbon cap layer is used as a doping source. With the carbon doping, the electrical resistivity of the MnSi 1.7 film decreases, while the Seebeck coefficient increases slightly. For reactive deposition, the MnSi x (x < 1.7) film is directly deposited on the heated substrate with a Si intermediate layer. By using a Si cap layer, a MnSi 1.7 film with a Seebeck coefficient of -292 μ V/K and electrical resistivity of 23 × 10-3 Ω- cm at room temperature is obtained. The power factor reaches 1636 μW/mK2 at 483 K. With such a high power factor, the n-type MnSi 1.7 material may be superior to p-type MnSi 1.7 material for the development of thermoelectric generators. Several smaller (0.036 - 0.099 eV ) and intermediate (0.10 - 0.28 eV ) activation energies are observed from the curves of logarithm of the resistivity versus reciprocal temperature. The larger activation energies (0.35 - 1.1 eV ) are consistent with the reported energy band gaps for higher manganese silicides.

Thermoelectric Properties of Higher Manganese Silicide Films with Addition of Chromium

Thermoelectric Properties of Mnsi1.7 Films with Addition of Aluminum and Carbon

Thermoelectric Properties of P‐type Higher Manganese Silicide Films Prepared by Solid Phase Reaction and Reactive Deposition

Thermoelectric Properties of Manganese Silicide Films

Enhancement Of Thermoelectric Power Factor Of Mnsi1.7 Films By Si Addition And Modulation Doping

Enhancement of Thermoelectric Power Factor Bysi:Baddition to Higher Manganese Silicide Film

PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING

Microstructures and Thermoelectric Properties of Higher Manganese Silicide Prepared by Rapid Solidification and Hot Pressing

Improved Thermoelectric Performance of Higher Manganese Silicides with Ge Additions

Microstructure and Thermoelectric Properties of SiGe-added Higher Manganese Silicides

Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

Preparation of n-type nano-scale MnSi1.7 films by addition of iron

Isoelectronic Re-Ge-codoped Higher Manganese Silicides with Enhanced Thermoelectric Properties Via Band Optimization, Charge Transfer, and Phonon Scattering

Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport

INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS

Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges

Influence Of Pre-Annealing And Mn Plus Al Double Doping On The Microstructure And Thermoelectric Properties Of Iron Disilicide

Enhancement of the Thermoelectric Power Factor of MnSi 1.7 Film by Modulation Doping of Al and Cu

Influence of an Interlayer on Thermoelectric Power Factor of HMS Film on Quartz Substrate

Thermoelectric Properties and Grain Refinement of Ge-substituted P-type Higher Manganese Silicide Alloy

Layer-by-layer Deposition of MnSi1.7 Film with High Seebeck Coefficient and Low Electrical Resistivity