Realizing high thermoelectric performance in p-type Si 1-x-y Ge x Sn y thin films at ambient temperature by Sn modulation doping

Ying Peng,Huajun Lai,Chengyan Liu,Jie Gao,Masashi Kurosawa,Osamu Nakatsuka,Tsunehiro Takeuchi,Shigeaki Zaima,Sakae Tanemura,Lei Miao
DOI: https://doi.org/10.1063/5.0012087
IF: 4
2020-08-03
Applied Physics Letters
Abstract:In this study, we report a power factor (PF) value as high as 1950 <i>μ</i>W m<sup>−1</sup> K<sup>−2</sup> for B-ion implanted thermoelectric Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> film. It was found that using metallic Sn as nanoparticles and Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.
physics, applied
What problem does this paper attempt to address?