Abstract:TiO2 is widely available as a chemically stable and harmless material. Recently, it has received a great deal of attention as a practical thermoelectric material. In this work, we studied the effects of aluminum (Al) doping concentration and lattice parameter on the thermoelectric properties of TiO2 at both room and high temperatures (475 degrees C). We found that the Al doping leads to a compression in the lattice constant and an increase in carrier concentration and consequently increases the electrical conductivity in the TiO2. We observed that the Al-doped TiO2 thin film shows a negative Seebeck coefficient and its value linearly decreases with increasing electrical conductivity. This result indicates that the Seebeck effect is developed by entropy-driven thermally assisted charge diffusion between low- and high-temperature surfaces. Further studies found that doping-induced reduction on entropy difference through electrical conductivity is accountable for the decrease of the Seebeck effect in the Al-doped TiO2. However, the Al doping can lead to phonon scattering at grain boundary interfaces and consequently decreases thermal conductivity. Therefore, the Al doping can essentially function as a mechanism to separately adjust electrical and thermal conductivities in the Al-doped TiO2. With Al doping, we obtained a maximal figure of merit (Z value) to be 1.30 at 475 degrees C and 0.48 At 23 degrees C from the Al-doped TiO2 at the doping concentration of 3%. The comparison of Z values between room and high temperatures confirms that thermally assisted charge diffusion and phonon scattering are two critical parameters for the development of efficient thermoelectric function in the Al-doped TiO2.

SEEBECK EFFECT OF NANO-SCALE P-TYPE SILICON FILMS ABOVE ROOM TEMPERATURE

Thermoelectric effect of silicon films prepared by aluminum-induced crystallization

INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS

Thermoelectric Effect of Silicon Films with Shallow- and Deep-Level Acceptors

Preparation of Nanocrystalline Silicon Carbide Films with High Seebeck Coefficient and Low Resistivity

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Cu-induced Seebeck peak in HMS/Si film

Temperature Dependence of Current Transport in Al/Al2o3 Nanocomposite Thin Films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Doping Effects on Internally Coupled Seebeck Coefficient, Electrical, and Thermal Conductivities in Aluminum-Doped Tio2

INFLUENCE OF OXYGEN IMPURITY ON SEEBECK COEFFICIENT OF NANOSCALE MnSi1.7 FILMS

Direct Observation of Hot-Electron-Enhanced Peltier Effects in Silicon Nanodevices

Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2o3 Nanocomposite/P-Si Diodes

Temperature dependence of the Seebeck coefficient of epitaxial $β$-Ga$_2$O$_3$ thin films

Thermoelectric Power of Nanoscale Mnsi1.7 Films

High Thermoelectric Power Factor of P-Type Amorphous Silicon Thin Films Dispersed with Ultrafine Silicon Nanocrystals

Thermoelectric Properties of P‐type Higher Manganese Silicide Films Prepared by Solid Phase Reaction and Reactive Deposition

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties

Effects of Al Doping on the Thermoelectric Performance of CoSi Single Crystal

Thermoelectric Properties of Mnsi1.7 Films with Addition of Aluminum and Carbon