Abstract:An innovative process for preparing silicon carbide (SiC) from acid leaching residue of ferronickel slag through a carbon–thermal reduction process was proposed in this study. The results indicate that the acid leaching residue is an ideal silicon source for SiC preparation according to its high amorphous silica content of 84.20% and fine particle size of d50 = 29.16 μm. Compared with carbon black, activated carbon, and graphite, coke is the more appropriate carbon source for SiC preparation. A micron-size SiC powder with grade of 88.90% and an average particle size (d50) of 44.68 μm can be obtained under the following conditions: the mass ratio of coke to leaching residue as 1.2:1, in an air atmosphere, reducing at 1600 °C for 3 h, following by decarbonizing at 700 °C for 4 h. The XRD, SEM and FTIR analyses show that the prepared powder is 3C-SiC and belongs to the β-SiC crystal type. Based on thermodynamic analysis and micromorphology observation, it can be concluded that with amorphous silica as the silicon source, the carbon–thermal synthesis of SiC powder follows both the solid–solid reaction mechanism and the gas–solid mechanism. The SiC created through solid–solid reaction is primarily nucleated in situ on amorphous SiO2, with a size close to that of the original acid-leaching slag, while the SiC generated according to the gas–solid mechanism mainly nucleates heterogeneously on the surface of carbon particles, resulting in a smaller particle size and mostly adhering to the surface of solid–solid nucleated SiC particles. This study provides a feasible method for the effective utilization of amorphous silica, which is also significant for the efficient consumption of the vast acid leaching residue.

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Synthesis of nanocrystalline silicon carbide powders

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

Synthesis and Characterization of SiC Nanowires Through a Reduction−Carburization Route

Preparation Of Nanocrystalline Silicon Carbide Powders By Carbothermal Reduction

Fabrication and photoluminescence of bicrystalline SiC nanobelts

Silicon carbide: from amorphous to crystalline material

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Low-Dimensional Sic Nanostructures: Fabrication, Luminescence, and Electrical Properties

Study on Purification Technology of Silicon Carbide Crystal Growth Powder

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

Preparation of Silicon Carbide Powder from Amorphous Silica and Investigation of Synthesis Mechanism

Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

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