Fabrication and photoluminescence of bicrystalline SiC nanobelts

Renbing Wu,Lingling Wu,Guangyi Yang,Yi Pan,Jianjun Chen,Rui Zhai,Jing Lin
DOI: https://doi.org/10.1088/0022-3727/40/12/023
2007-01-01
Abstract:SiC nanobelts have been synthesized by a reaction of Si and CNTS without catalysts using the simple evaporation method. The nanobelts display a unique bicrystalline structure that has growth directions, i.e. [121] and [111], splitting along the twin boundary that exists at the centreline. The width of the nanobelts is in the range of 100-200 nm, the thickness ranging from 10 to 20 nm and their lengths are up to several tens of micrometres. The growth of bicrystalline SiC nanobelts follows the vapour-solid process. The photoluminescence spectrum of bicrystalline SiC nanobelts at room temperature shows a strong emission peak centred at 418 nm with a weak broad emission, based on which a possible emission mechanism is also discussed.
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