Abstract:Conformal chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS) and hydrogen (H2) onto high-aspect-ratio (HAR; typically >100:1) three-dimensional features has been a challenge in the fabrication of ceramic matrix composites. In this study, the impact of heterogeneous underlayers on the initial nucleation of SiC-CVD was studied using HAR (1000:1) microchannels with a tailored wetting underlayer of Si(100) and dewetting underlayers of thermally formed amorphous silicon dioxide (a-SiO2) and turbostratic boron nitride (t-BN). Incubation periods were distributed in the microchannels on a-SiO2 and t-BN underlayers, with the longest period of 70 min found at the feature-bottom due to a decreased concentration (C) of film-forming species. The longer incubation periods with more dewetting underlayers arose due to demoted initial nucleation. Prolonged incubation at the feature bottom led to poor conformality because thick films had already formed at the inlet when film formation began at the feature bottom. The incubation periods were eliminated by increasing the supply of MTS/H2, in accordance with classical heterogeneous nucleation theory. In the meantime, carbon-rich SiC films formed in the vicinity of dewetting a-SiO2 and t-BN underlayers at the feature bottoms, with greater carbon segregation on more dewetting underlayers. This was probably due to the deposition of pyrocarbons (CH4, C2H2, and/or C2H4) generated from MTS/H2 in the gas phase. Decreasing the temperature (T) from 1000 to 900 °C prevented carbon-rich film formation, and the expected deposition rate of pyrocarbon decreased to 0.6% for the case of CH4. A higher C of MTS/H2 combined with a lower T enabled conformal and stoichiometric film formation on the heterogeneous HAR features.

Characterization of Silicon Carbide Grown on Rb-Sic by Chemical Vapor Deposition

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by Cvi Process

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Conformal and Stoichiometric Chemical Vapor Deposition of Silicon Carbide onto Ultradeep Heterogeneous Micropores by Controlling the Initial Nucleation Stage

The structure of chemical vapor deposited silicon carbide

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Preparation of Silicon Carbide Coating Layer by Fluidized Bed Chemical Vapor Deposition Using a Halogen-Free Precursor

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Atomistic Insights into Chemical Vapor Deposition Process of Preparing Silicon Carbide Materials Using ReaxFF-MD Simulation

Characterizations on the Doping of Single-Crystal Silicon Carbide

Cubic SiC nano-thin films and nano-wires: high vacuum metal-organic chemical vapor deposition, surface characterization, and application tests

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Synthesis and characterization of silicon carbide whisker arrays prepared by thermal evaporation method

Continuous Preparation of SiC Nanowires Using Fluidized Bed Chemical Vapor Deposition Method