Abstract:Carbon nitride films were deposited on Co/Ni-covered Si(100) wafers at room temperature using a dc glow discharge plasma beam deposition method. The glow discharge has been carried out in a mixed gas of nitrogen and methane in different relative proportions and has maintained stable in an glow operating pressure around 30Torr. Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy were carried out to investigate morphology, composition, structure and crystallinity of the as-deposited films. In scanning electron microscopy images, the as-deposited films consist of crystallites with an average size of about 20–30nm, and an interesting cauliflower structure is found in the center of a prepared sample. The X-ray diffraction results indicate that β- and graphitic-C3N4 crystallites and CNx or carbon nanotubes exist in the as-deposited films. The X-ray photoelectron spectroscopy results show that the [N]/[C] ratios are 0.34–0.46 and the peak shapes and intensities in the N 1s and C 1s regions are similar to those previously reported by our research group using the atom-beam assisted pulsed laser deposition method. The Raman spectra show two separated characteristic bands: a disordered D band (around 1323cm−1) that indicates the presence of C3N4 components, and a graphitic G band (around 1593cm−1). The impacts of the substrate temperatures, nitrogen/methane pressure ratios and Co/Ni layer thicknesses on the properties of the as-deposited films are discussed.

Ion-beam-assisted Deposition of CNx Films

Investigation of carbon nitride films by cathodic arc evaporation

Optical & Electronic Properties of Carbon Nitride Thin Films

Investigation of Carbon Nitride Films Deposited by Ion Beam-Assisted Deposition with Low Bombarding Energy of N Ions

Preparation and Characterisation of Carbon Nitride Films Deposited by Pulsed Laser Arc Deposition

Cn(X) Films Deposited By Laser-Ablation Of Graphite Under Low-Energy Nitrogen-Ion Beam Bombardment

Formation of CNx thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

Growth of Ni/Co-catalyzed crystalline CNx thin films by nitrogen-plasma-assisted pulsed laser deposition

C3N4 Film Deposited by Synchrotron Radiation Assisted CVD

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation

Electronic and Mechanical-Properties of Carbon Nitride Films Prepared by Laser-Ablation Graphite under Nitrogen Ion-Beam Bombardment

Enhancement of the properties of pulsed laser-deposited carbon nitride by the synchronisation of laser and N2 gas jet pulses

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Synthesis and Thermal Decomposition of Carbon Nitride Films Prepared by Nitrogen Ion Implantation into Graphite

Thermal Stability of Carbon Nitride Thin Films Prepared by Electron Cyclotron Resonance Plasma Assisted Pulsed Laser Deposition

Effect of bombarding energy of N ions on composition, hardness and surface free energy of carbon nitride films

Deposition of Nanocrystalline Cnx Thin Films on Co/Ni-Covered Substrate by Nitrogen-Atom-Beam-Assisted Pulsed Laser Ablation

Characteristics of Carbon Nitride Films Synthesized by Single-Source Ion Beam Enhanced Deposition System

Amorphous CNx films prepared by electrochemical deposition