Cn(X) Films Deposited By Laser-Ablation Of Graphite Under Low-Energy Nitrogen-Ion Beam Bombardment

Zhongmin Ren,Xiaxing Xiong,Yuancheng Du,Jiada Wu,Zhifeng Ying,Yuanxun Qiu,Fuming Li
DOI: https://doi.org/10.1088/0256-307X/11/7/017
1994-01-01
Chinese Physics Letters
Abstract:Deposition of CN(x) thin films on Si(111) has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Films with a maximum N-concentration of 34% are obtained. The N species is found to be relatively constant along the depth of films. X-ray spectroscopy data confirm the existence of covalent C - N bonds. Nanocrystallites structure has been detected in the amorphous matrix of the films. Qualitative hardness tests indicate that the films are relatively hard and adhesive.
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