Field emission properties of nano-composite carbon nitride films

I. Alexandrou,M. Baxendale,G. A. J. Amaratunga,N. L. Rupesinghe,C. J. Kiely
DOI: https://doi.org/10.48550/arXiv.cond-mat/9909125
1999-09-08
Materials Science
Abstract:A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.
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