Sic Nanocrystals: High-Rate Deposition and Nano-Scale Control by Thermal Plasma

Tengfei Cao,Haibao Zhang,Binhang Yan,Wei Lu,Yi Cheng

DOI: https://doi.org/10.1039/c4ra07528e

IF: 4.036

2014-01-01

RSC Advances

Abstract:SiC nanocrystals were fabricated at a high rate with SiCl4 as the Si source by using thermal-plasma-enhanced chemical vapor deposition through the assembly of precursor atoms.

What problem does this paper attempt to address?

Deterministic Plasma-Aided Synthesis of High-Quality Nanoislanded Nc-Sic Films

Qijin Cheng,S. Xu,Jidong Long,Kostya (Ken) Ostrikov

DOI: https://doi.org/10.1063/1.2731728

2007-01-01

Abstract:Despite major advances in the fabrication and characterization of SiC and related materials, there has been no convincing evidence of the synthesis of nanodevice-quality nanoislanded SiC films at low, ultralarge scale integration technology–compatible process temperatures. The authors report on a low-temperature (400°C) plasma-assisted rf magnetron sputtering deposition of high-quality nanocrystalline SiC films made of uniform-size nanoislands that almost completely cover the Si(100) surface. These nanoislands are chemically pure, highly stoichiometric, have a typical size of 20–35nm, and contain small (∼5nm) nanocrystalline inclusions. The properties of nanocrystalline SiC films can be effectively controlled by the plasma parameters.
Formation of Sic Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

Chen Mudi,Zhu Xiaodong,Ke Bo,Ding Fang,Wen Xiaohui,Zhou Haiyang

DOI: https://doi.org/10.1088/1009-0630/12/5/08

2010-01-01

Abstract:Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiC-NWs) grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.
Chemically Active Plasmas for Deterministic Assembly of Nanocrystalline SiC Film

Q. J. Cheng,J. D. Long,Z. Chen,S. Xu

DOI: https://doi.org/10.1088/0022-3727/40/8/s10

2007-01-01

Journal of Physics D Applied Physics

Abstract:Silicon carbide thin films are self- assembled onto crystalline silicon substrate from a sintered SiC target at low substrate temperature of 400. C in Ar + H-2 discharge using inductively coupled plasma ( ICP) assisted RF magnetron sputtering system. Surface morphology and structural properties of SiC films are investigated by SEM, XRD, FTIR and EDX. SEM, XRD and FTIR results show that the SiC film deposited at an ICP power of 800 W is 3C-SiC nanocrystalline film while the film deposited without ICP power exhibits an amorphous structure. At ICP power of 800 W, there exists a large amount of dissociated H in the plasma, leading to the structural relaxation of the amorphous network towards the crystalline state. The EDX result shows that elemental compositions of Si and C atoms in both the films are almost stoichiometric.
Phase-controlled Synthesis of Nickel Silicide Nanostructures

Xing Fan,Hui Zhang,Ning Du,Deren Yang

DOI: https://doi.org/10.1016/j.materresbull.2012.06.017

IF: 5.6

2012-01-01

Materials Research Bulletin

Abstract:Dense single-crystalline Ni2Si nanowires, Ni3Si2 nanowires and nanorods, and NiSi nanowires have been successfully synthesized in large-scale on the surface of Ni foam via a simple chemical vapor deposition of SiH4 at 450–600°C. It is indicated that the reaction temperature and the flow rate of SiH4 play an important role in the control of phases and morphologies of nickel silicide nanostructures. The temperature controls the balance of Ni-diffusion and the degree of supersaturation of Si in Ni, thus producing different nickel silicide phases, whereas the different flow rates of SiH4 lead to the different nickel silicide morphologies by controlling the size and the quality of the nucleation centers. We expect that our synthesis approach and results will provide valuable information for the fabrication and application of other metal silicide nanostructures.
Selective Synthesis Of 3c-Sic Hollow Nanospheres And Nanowires

Peng Li,Liqiang Xu,Yitai Qian

DOI: https://doi.org/10.1021/cg800008f

IF: 4.01

2008-01-01

Crystal Growth & Design

Abstract:3C-SiC hollow nanospheres with a high yield (similar to 80%) were prepared by using SiCl4, CBr3H, and Na-K alloy at 130 degrees C for 15 h and a subsequent HClO4 treatment process at 180 degrees C. These SiC hollow nanospheres have diameters in the range of 80-420 nm and an average shell thickness of similar to 15 nm. High resolution transmission electron microscopy investigation reveals that these hollow spherical nanocrystals have rough surfaces, indicating they are composed of nanoparticles. When Na-K alloy was substituted by Na (or K) and in the mean time the temperature was set at 240 degrees C while keeping other conditions unchanged, a large quantity of randomly distributed and highly crystalline SiC nanowires with diameters ranging from 30 to 50 nm and lengths up to several tens of micrometers also can be produced. The possible formation mechanisms of the products with distinct dimensions were briefly discussed. The method used here generally could be used to synthesize other carbides at low temperature.
Synthesis of functional ceramic nanocrystals (SiC, TiC, TiN) by arc-discharge plasma process

Jian Gao,Jieyi Yu,Shanshan Lu,Jingshuang Liang,Wenfei Yang,Ziming Wang,Xinglong Dong

DOI: https://doi.org/10.1109/NANO.2017.8117328

2017-01-01

Abstract:Ceramic nanomaterials are attractive due to the functional properties such as optical, electronic, thermal behaviors as well biocompatibility. In this work three kinds of functional ceramic nanocrystals, i.e. SiC (hexagonal platelet-like), TiC (truncated-octahedral) and TiN (cubic structured) were synthesized by a facial DC arc-discharge plasma process. Preparation atmospheres were chosen for the certain ceramic nanocrystals, e.g. source gases (CH 4 and N 2 ), inert gas (Ar) and active gas (H 2 ) were employed to tailor the ceramic species and their morphology and size. Taking SiC nanocrystals as an example, the formation mechanism was discussed with experimental results of optical emission spectroscopy (OES) diagnoses.
Low-temperature PECVD of Nanodevice-Grade Nc-3C-sic

Qijin Cheng,Shuyan Xu,Jidong Long,Kostya Ken Ostrikov

DOI: https://doi.org/10.1002/cvde.200706624

2007-01-01

Chemical Vapor Deposition

Abstract:In this work, we report a plasma-based synthesis of nanodevice-grade nc-3C-SiC films, with very high growth rates (7-9 nm min-1) at low and ULSI technology-compatible process temperatures (400-550 °C), featuring: (i) high nanocrystalline fraction (67% at 550 °C); (ii) good chemical purity; (iii) excellent stoichiometry throughout the entire film; (iv) wide optical band gap (3.22-3.71 eV); (v) refractive index close to that of single-crystalline 3C-SiC, and; (vi) clear, uniform, and defect-free Si-SiC interface. The counter-intuitive low SiC hydrogenation in a H2-rich plasma process is explained by hydrogen atom desorption-mediated crystallization.
High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Tengfei Cao,Haibao Zhang,Binhang Yan,Yi Cheng

DOI: https://doi.org/10.1039/c3ra43481h

IF: 4.036

2013-01-01

RSC Advances

Abstract:Hydrogenated nanocrystalline silicon (nc-Si:H) is a promising alternative for crystalline silicon (c-Si) in the photovoltaic industry. We proposed an atmospheric pressure thermal plasma enhanced CVD (APTPECVD) process for high rate deposition of nc-Si: H on silicon and glass substrates using SiCl4 as the deposition precursor. The deposition rate under typical operating conditions could reach 9.78 nm s(-1), and the deposited nc-Si: H film thickness could reach 17.6 mu m. The grain diameter and crystalline fraction of the deposition product were characterized using SEM, TEM, Raman spectroscopy and XRD. The photoluminescence performance at room temperature was discovered.
Synthesis Of Sic-Si3n4 Composite Nanoparticles By Laser-Induced Chemical Deposition

Xing-Guo LI

DOI: https://doi.org/10.3321/j.issn:1001-4861.2002.01.020

2002-01-01

Chinese journal of inorganic chemistry

Abstract:SiC-Si3N4 composite nanoparticles were synthesized by laser-induced chemical vapor deposition. The crystalline structure, morphology and dangling bonds were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron spin resonance (ESR). The original SiC-Si3N4 composite nanoparticles have a sharp particle size distribution and the mean particle diameter is 32nm. A SiC-Si3N4 composite nanoparticle is composed of a single crystal or multicrystal with sizes from 5 to 30nm. The nanoparticles have high purity, are approximately spherical in shape and suitable for treatment and sintering. Moreover, the nanoparticles show high thermal stability, and decrease in the dangling bonds, phase deposition and particle growth take place in order during heating.
Fabrication of Si3n4/Sic Nanocomposites by Spark Plasma Sintering of Amorphous Sicn Powders Derived from A Polymeric Precursor

Weiyou Yang,Zhenkun Fan,Huatao Wang,Zhipeng Xie,Hezhuo Miao,Linan An

2006-01-01

Journal of Ceramic Processing Research

Abstract:Si3N4/SiC nanocomposites were fabricated by spark plasma sintering (SPS) of amorphous SiCN ceramic powders derived from a polymeric precursor with 3 wt% yttria as an additive. It was found that the SPS parameters, such as sintering temperature, dwell time, pressure and heating rate, remarkably affected the density and grain size of the nanocomposites obtained. This provided a new method to fabricate Si3N4/SiC nanocomposites without applying the high pressure and high sintering temperature used by the conventional process.
Low-Temperature Synthesis Of Homogeneous Nanocrystalline Cubic Silicon Carbide Films

qijin cheng,shiyi xu

DOI: https://doi.org/10.1063/1.2776155

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 degrees C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 degrees C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X <= 33%) in the gas mixture employed in our experiments.(C) 2007 American Institute of Physics.
Effective Control of Nanostructured Phases in Rapid, Room-Temperature Synthesis of Nanocrystalline Si in High-Density Plasmas

Qijin Cheng,Shuyan Xu,Shiyong Huang,Kostya (Ken) Ostrikov

DOI: https://doi.org/10.1021/cg900176c

2009-01-01

Abstract:An innovative and effective approach based on low-pressure, low-frequency, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to synthesize device-quality nanocrystalline silicon (nc-Si) thin films at room temperature and with very competitive growth rates. The crystallinity and microstructure properties (including crystal structure, crystal volume fraction, surface morphology, etc.) of this nanostructured phase of Si can be effectively tailored in broad ranges for different device applications by simply varying the inductive rf power density from 25.0 to 41.7 mW/cm3. In particular, at a moderate rf power density of 41.7 mW/cm3, the nc-Si films feature a very high growth rate of 2.37 nm/s, a high crystalline fraction of 86%, a vertically aligned columnar structure with the preferential (111) growth orientation and embedded Si quantum dots, as well as a clean, smooth and defect-free interface. We also propose the formation mechanism of nc-Si thin films which relates the high electron density and other unique properties of the inductively coupled plasmas and the formation of the nanocrystalline phase on the Si surface.
Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

王新华

DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.03.004

2004-01-01

Abstract:High-quality amorphous and nano-crystalline silicon carbide films were deposited by thermal plasma physical vapor deposition (TPPVD) of SiC ultra fine powder. The films were characterized with high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) X-ray diffraction (XRD) infrared Fourier transform (FITR) and X-ray photoelectron spectroscopy (XPS). The results show that at a substrate temperature lower than 600°C and a powder feeding rate less than 20 mg/min, amorphous SiC film grows with a maximum deposition rate of 25 nm/s, whereas at a substrate temperature ranging from 600°C to 1000°C, nano-crystalline SiC films, with grain size of 3 nm- 15 nm, grow at a maximum deposition rate of 230 nm/min. The hardness of the amorphous and nano-crystal SiC films was found to be 33.8 and 38.6 GPa, respectively.
A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

yi ding,riku yamada,ryan gresback,shu zhou,xiaodong pi,tomohiro nozaki

DOI: https://doi.org/10.1088/0022-3727/47/48/485202

2014-01-01

Abstract:Silicon nanoparticles (Si NPs) synthesized in non-thermal plasma with silicon tetrachloride (SiCl4) are anticipated as a non-toxic and inexpensive Si source for important applications. This study examines the crystallinity, yield, and size distribution of Si NPs in terms of specific energy input (SEI) for 2.5-65 J cm(-3) and the H-2/SiCl4 ratio (1-10). The particle growth mechanism is discussed comprehensively. Atomic hydrogen (H) production using non-thermal plasma is the primary important step for SiCl4 dechlorination at low temperatures. The Si NP yield increases with SEI (plasma power divided by total gas flow) because SiCl4 conversion increases with energy fed into the unit volume of the feed gas. At low SEI, Si NPs were mostly in amorphous material because of insufficient plasma heating. A maximum yield of 50 wt% was obtained when SEI = 10 J cm(-3) (H-2/SiCl4 = 10) with a crystal fraction of about 1%. Increased SEI is necessary to improve crystal fraction, but excessive SEI decreases the NP yield remarkably. The NP yield losses correspond to increasing NP-free thin film growth on the reactor wall. Mass spectrometry shows that SiCl4 is highly decomposed with greater SEI. Hydrogen chloride (HCl) increases as a by-product. At higher SEI, particle nucleation and subsequent growth are suppressed.
Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Guanchao Yan,Siye Ding,Xiaodong Zhu,HaiYang Zhou,Xiaohui Wen,Fang Ding

2006-01-01

Abstract:Nanostructured SiC films, with SiC grains embedded in amorphous matrix, were grown by plasma enhanced chemical vapor deposition (PECVD) with hydrogen diluted hexalmethyldisiloxane (HMDSO) as the precursor. The films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS).The results show that at 750°C, ellipsoidal nano grains encapsulated by amorphous SiO xC 3 : H are crystalline α-SiC. As HMDSO concentration increases, the surface uniformity, surface compactness, and crystal structure of the films improve possibly because HMDSO monomers and hydrogen high-flow-rate promote formation and crystallization of the α-SiC grains.
Simple Synthesis of Ultrafine Amorphous Silicon Carbide Nanoparticles by Atmospheric Plasmas

Jiawen Zhou,Cheng Wang,Ming Song,Xianhui Chen,Weidong Xia

DOI: https://doi.org/10.1016/j.matlet.2021.130072

IF: 3

2021-01-01

Materials Letters

Abstract:•An atmospheric plasma was developed for amorphous SiC nanoparticles synthesis.•Ultrafine amorphous SiC nanoparticles (~9 nm) were preparedby HMDS decomposition.•The surface of SiC nanoparticles had abundant functional groups and oxidized overlayers.•Strong blue-green light emission was found under the excitation of 340–420 nm.•High input energy promotedthetransition from amorphous structure to β-SiC.
Synthesis of Ultrafine Silicon Carbide Nanoparticles Using Nonthermal Arc Plasma at Atmospheric Pressure

Cheng Wang,Jiawen Zhou,Ming Song,Zhongshan Lu,Xianhui Chen,Yan Zheng,Weidong Xia

DOI: https://doi.org/10.1111/jace.17811

IF: 4.186

2021-01-01

Journal of the American Ceramic Society

Abstract:It remains a significant challenge for the scalable production of ultrafine silicon carbide (SiC) nanoparticles with sizes smaller than 10 nm. In this work, a novel process based on atmospheric nonthermal arc plasma was proposed for the continuous synthesis of ultrafine SiC nanoparticles. This low-cost and scalable technique allows preparation of SiC nanoparticles with small size (5-9 nm) and narrow size distribution via hexamethyldisilane (HMDS) decomposition in an argon/hydrogen plasma environment. The as-synthesized products were carbon-rich beta-SiC nanoparticles with plentiful functional groups on the surface. The addition of hydrogen in plasma gas can tune the product characteristics, such as decreasing particle size, improving crystallinity, and reducing carbon and oxygen contents. Moreover, the as-prepared beta-SiC nanoparticles had a high band gap (around 2.5 eV), and their photoluminescence peak showed an obvious blueshift relative to that of bulk beta-SiC, which was mainly attributed to the quantum confinement effect induced by their ultrafine size. According to the spectral information of arc plasma, the formation of SiC nanoparticles in the plasma was discussed.
Single-source-precursor Synthesis and Air-Plasma Ablation Behavior of (ti,zr,hf)c/sic Ceramic Nanocomposites at 2200 °C

Li Lu,Qingbo Wen,Jinrun Hu,Tianxing Jiang,Xiangchao Ren,Yalei Wang,Yi Zeng,Xiang Xiong

DOI: https://doi.org/10.26599/jac.2024.9220918

IF: 11.534

2024-01-01

Journal of Advanced Ceramics

Abstract:Dense monolithic (Ti,Zr,Hf)C/SiC ceramic nanocomposites with four different molar ratios of metallic elements in the (Ti,Zr,Hf)C phase (i.e., Ti : Zr : Hf = 1 : 1 : 1, 2 : 3 : 5, 2 : 3 : 3, and 1 : 2 : 1) were prepared upon pyrolysis of novel (Ti,Zr,Hf)-containing single-source precursors (SSPs), followed by spark plasma sintering (SPS). A thorough characterization was conducted to elucidate the synthesis of the SSPs, polymer-to-ceramic transformation, chemical/phase compositions, and microstructure of the SiTiZrHfC-based ceramics. The results revealed the feasibility of synthesizing nanocomposites with high (Ti,Zr,Hf)C contents using the SSP method. These nanocomposites were characterized by a unique microstructure with in situ generated (Ti,Zr,Hf)C@C core-shell nanoparticles homogeneously mixed with beta-SiC. The ablation behavior of the nanocomposites was evaluated on an air-plasma device for 60 s. Impressively, the nanocomposites exhibited excellent ablation resistance, and the lowest linear ablation rate reached -0.58 mu m/s at 2200 degrees C. Notably, the ablation resistance can be dramatically improved by precisely tailoring the atomic ratios of metal elements within the (Ti,Zr,Hf)C phase via the molecular design of the SSPs. The formation of a multiple-oxide layer with both a high-meltingpoint phase ((Ti,Zr,Hf)O2) and low-melting-point phases ((Zr,Hf)TiO4) and glassy SiO2, as well as their structure, played a critical role in the enhanced ablation resistance. The uniform distribution of the high-melting-point (Ti,Zr,Hf)O2 nano/microparticles throughout the glassy SiO2 matrix significantly enhanced the viscosity and stability of the oxide layer by the pinning effect, offering superior protection against the ingress of oxygen atoms and excellent resistance to mechanical erosion.
Inductively Coupled Plasma-Assisted RF Magnetron Sputtering Deposition of Highly Uniform SiC Nanoislanded Films

Qijin Cheng,S. Xu,Shiyong Huang,Jidong Long,Yuping Ren,Ming Xu,Kostya Ostrikov

DOI: https://doi.org/10.1109/tps.2008.927350

IF: 1.368

2008-01-01

IEEE Transactions on Plasma Science

Abstract:A new deposition technique-inductively coupled plasma-assisted RF magnetron sputtering has been developed to fabricate SiC nanoislanded films. In this system, the plasma production and magnetron sputtering can be controlled independently during the discharge. The deposited SiC nanoislanded films are highly uniform, have excellent stoichiometry, have a typical size of 10-45 nm, and contain small (similar to 6 nm) cubic SiC nanocrystallites embedded in an amorphous SiC matrix.
High Purity and High Yield Sic Nanowires Synthesis Without Catalyst by Graphite Sheet Layer Assembly and Thermal Evaporation

Qiqi Zhao,Pengchao Kang,Wei Xue,Zhaoqun Sun,Zhenlong Chao,Longtao Jiang,Ziyang Xiu

DOI: https://doi.org/10.2139/ssrn.4079578

2022-01-01

SSRN Electronic Journal

Abstract:A simple and convenient method for the preparation of a large number of high-purity cotton-like SiC nanowires by thermal evaporation was developed without any catalyst. The Si particles with loose and discontinuous SiO2 coating (marked as Si@SiO2) were prepared by wet oxidation process as the source of silicon, and the high purity graphite sheets were used as carbon sources. Then the high purity and high yield of the SiC nanowires, which were over 100 Î¼m in length and about 100 nm in diameter, were prepared by the form of layers assembly of the graphite substrate according to the distribution of gas. The SiC nanowires have high crystallinity with flat and smooth surfaces. The distribution of the gas concentration in the reaction vessel and the growth mechanism of the SiC nanowires were studied. Furthermore, the SiC nanowires showed good blue-green photoluminescence property, which has been expected to make positive progress in the optoelectronic field.

Sic Nanocrystals: High-Rate Deposition and Nano-Scale Control by Thermal Plasma

Deterministic Plasma-Aided Synthesis of High-Quality Nanoislanded Nc-Sic Films

Formation of Sic Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

Chemically Active Plasmas for Deterministic Assembly of Nanocrystalline SiC Film

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Selective Synthesis Of 3c-Sic Hollow Nanospheres And Nanowires

Synthesis of functional ceramic nanocrystals (SiC, TiC, TiN) by arc-discharge plasma process

Low-temperature PECVD of Nanodevice-Grade Nc-3C-sic

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Synthesis Of Sic-Si3n4 Composite Nanoparticles By Laser-Induced Chemical Deposition

Fabrication of Si3n4/Sic Nanocomposites by Spark Plasma Sintering of Amorphous Sicn Powders Derived from A Polymeric Precursor

Low-Temperature Synthesis Of Homogeneous Nanocrystalline Cubic Silicon Carbide Films

Effective Control of Nanostructured Phases in Rapid, Room-Temperature Synthesis of Nanocrystalline Si in High-Density Plasmas

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Simple Synthesis of Ultrafine Amorphous Silicon Carbide Nanoparticles by Atmospheric Plasmas

Synthesis of Ultrafine Silicon Carbide Nanoparticles Using Nonthermal Arc Plasma at Atmospheric Pressure

Single-source-precursor Synthesis and Air-Plasma Ablation Behavior of (ti,zr,hf)c/sic Ceramic Nanocomposites at 2200 °C

Inductively Coupled Plasma-Assisted RF Magnetron Sputtering Deposition of Highly Uniform SiC Nanoislanded Films

High Purity and High Yield Sic Nanowires Synthesis Without Catalyst by Graphite Sheet Layer Assembly and Thermal Evaporation