Abstract:SiNx:H film deposition via plasma-enhanced chemical vapor deposition has been widely used in semiconductor devices. However, the relationship between the chemical bonds and the physical and chemical properties has rarely been studied for films deposited using tools in terms of the actual volume production. In this study, we investigated the effects of the deposition conditions on the H-related chemical bonding, physical and chemical properties, yield, and quality of SiNx:H films used as passivation layers at the 28 nm technology node. The radiofrequency (RF) power, electrode plate spacing, temperature, chamber pressure, and SiH4:NH3 gas flow ratio were selected as the deposition parameters. The results show a clear relationship between the H-related chemical bonds and the examined film properties. The difference in the refractive index (RI) and breakdown field (EB) of the SiNx:H films is mainly attributed to the change in the Si–H:N–H ratio. As the Si–H:N–H ratio increased, the RI and EB showed linear growth and exponential downward trends, respectively. In addition, compared with the Si–H:N–H ratio, the total Si–H and N–H contents had a greater impact on the wet etching rates of the SiNx:H films, but the stress was not entirely dependent on the total Si–H and N–H contents. Notably, excessive electrode plate spacing can lead to a significant undesired increase in the non-uniformity and surface roughness of SiNx:H films. This study provides industry-level processing guidance for the development of advanced silicon nitride film deposition technology.

Parametric Study and Residual Gas Analysis of Large-Area Silicon-Nitride Thin-Film Deposition by Plasma-Enhanced Chemical Vapor Deposition

Experimental Study of the Effects of Showerhead Configuration on Large-Area Silicon-Nitride Thin Film by Plasma-Enhanced Chemical Vapor Deposition

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition

Numerical Study of Si Nanoparticle Formation by SiCl4hydrogenation in RF Plasma

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Processing and Characterisation of PECVD Silicon Nitride Films

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Parametrization of the Stillinger-Weber Potential for Si/N/H System and Its Application to Simulations of Silicon Nitride Film Deposition with SiH4/NH3

Deposition and Characterization of Ammonia-free PECVD Silicon Nitride

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Research on Nitride Membranes Grown by PECVD

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD