Abstract:The phosphorus doped n-type hydrogenated microcrystalline silicon (n-μc-Si:H) thin films are prepared, at the two low substrate temperatures of room temperature and 200°C, through a low-frequency inductively coupled plasma assisted chemical vapor deposition. The effect of the substrate temperature on the structural properties of the thin films, such as the X-ray Diffraction (XRD) patterns and the Raman spectra, is studied. The XRD measurements show that the diffraction orientations of the thin films present an obvious change when the radio frequency power is increased from 1300W to 2300W. The Raman spectra of the thin films deposited at room temperature unambiguously present a phase transition from the amorphous structure to microcrystalline structure whereas no structural phase transition is observed for the thin films deposited at 200°C. The effect of the substrate temperature on the crystalline volume fraction of the thin films presents a large difference for the radio frequency power in the range of 1300W–1700W, while the difference becomes small when the power is increased from 1700W to 2300W. The deposition rate and the radio frequency power-sheet resistance curve of the thin films deposited at room temperature are obviously different from those of the thin films prepared at 200°C. It is attributed to the joint effect of the radio frequency power and substrate temperature on the doping concentration. The electron energy distribution function of the species in the chamber is mainly distributed in a low energy range.

Investigation on the initial growth of nanocrystalline silicon prepared from hydrogen-diluted SiCl<sub>4</sub> at low temperatures

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Low-temperature deposition of µc-Si : H thin films by a low-frequency inductively coupled plasma for photovoltaic applications

Effects of Substrate Temperature on Structural, Optical and Morphological Properties of Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Nanocrystallization of a-Si:H thin films deposited by PECVD under low argon dilution

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Light Emission from Si Nanoclusters Formed at Low Temperatures

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Silicon nano-wires grown at low temperature

Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas