Abstract:Si 1-x Ge x alloy nanocrystals (NCs) are a class of benign semiconductors that show size and composition-tunable energy gaps and promising optical properties because of the lattice disorder. The random distribution of elements within the alloys can lead to efficient light-matter interactions, making them attractive for Si-compatible optoelectronic devices, transistors, charge storage, and memory applications. However, the fabrication of discrete, quantum-confined alloys has proven a challenging task. Herein, we report solid-state co-disproportionation of a hydrogen silsesquioxane (HSQ)/GeI 2 composite precursor to produce homogeneous Si 1-x Ge x NCs with control over diameter (5.9 ± 0.7 – 7.8 ± 1.1 nm) and composition (x = 0 – 14.4%) with strong size confinement effects and visible to near IR absorption and emission properties. As-synthesized alloys show an expanded diamond cubic Si structure, a systematic red-shift of Si-Si Raman peak, and emergence of Si-Ge/Ge-Ge peaks with increasing Ge, consistent with the admixture of isovalent elements. Surface analysis of alloys reveals Si 0 /Ge 0 core and Si n+ /Ge n+ surface species and efficient surface functionalization with alkyl ligands via thermal hydrosilylation and/or hydrogermylation. Alloy NCs exhibit absorption onsets (2.26 – 1.92 eV), indirect (1.53 – 1.80 eV) and direct (2.88 – 2.47 eV) energy gaps, and photoluminescence (PL) maxima (1.40 – 1.27 eV) that can be tuned by manipulating the diameter and/or composition. The experimental PL energies are consistent with those predicted by density functional theory (DFT) suggesting that the PL originates from NC core electronic transitions. The facile low-temperature solid-state synthesis and control over physical properties realized in this study will allow discrete Si 1-x Ge x NCs to emerge as low to nontoxic, earth-abundant, and Si-compatible nanostructures for a broad range of electronic and photonic technologies.

Twinning Defects in Spherical GeSi Alloy Nanocrystals

Twinning Ge0.54Si0.46 Nanocrystal Growth Mechanism in Amorphous SiO2 Films

Twinned Silicon and Germanium Nanocrystals: Formation, Stability and Quantum Confinement

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

The Structure and Property Characteristics of Mn-doped SiGe Alloy Nanowires Prepared by Catalyst-Free Growth

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Hidden State of Si 50 Ge 50 Nanoparticles During Rapid Solidification

Pleomorphism and multidirectional combination of Si crystal nucleation during solidification

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Twin-twin Geometric Structure Effect on the Twinning Behavior of an Mg-4Y-3Nd-2Sm-0.5Zr Alloy Traced by Quasi-in-situ EBSD

Spherical Growth and Surface-Quasifree Vibrations of Si Nanocrystallites in Er-doped Si Nanostructures.