Abstract:An on-line thin film stress measuring system based on Hartmann-Shack sensor technique is introduced to measure the film stress of SiO_2, TiO_2, Ta_2O_5, Al_2O_3and ITO films at different thickness which are prepared by ion assisted deposition, and the effects of substrate materials and preparation parameters on the stresses of SiO_2 and TiO_2are investigated in details. The results show that the film stress as a function of the film thickness is linear in the initial stage of coating, and the film stress tends to be a stable value when the film thickness reaches a certain value. The thermal stress which resulted from the different coefficients of thermal between substrates and thin films can be diminished by choosing suitable substrates. In terms of TiO_2 films, the thermal stress plays a major role when the substrate temperature is below 150℃, but the compressive stress which resulted from the dense structure of films is dominant while the substrate temperature is above 150 ℃. However, the thermal stress in SiO_2 films is always dominant at different deposition temperatures. The tensile stress in SiO_2 films is mainly caused by the effects of ion assisted sputtering when the chamber pressure is below 1.7×10~(-2) Pa, and the tensile stress in SiO_2 films increases with the vacuum chamber's pressure increasing when it is above 1.7×10~(-2)Pa, but the refractive index decreases.

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Analysis of stress in TiO2 thin film prepared with ion assisted deposition

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Study on the Measurement and Mechanism of Stress in SiO2 Thin Films

Effects of Substrate Materials and Deposition Parameters on Film Stress

Effect of Ion-Beam Assisted Deposition on the Film Stresses of TiO2 and SiO2 and Stress Control

Stress Analysis of Mo, MoSi 2 and Si Mono-Layer Thin Films and Multilayers Prepared by Magnetron Sputtering

Preparation of Ti and TiN Films and Investigation of the Residual Stress Measuring Method

Growth and On-Line Stress Evaluation of TiO2 and SiO2 Films

Effects of film thickness and microstructures on residual stress

Current Status of Research on Measurement of the Stress in Thin Film

Residual Stresses in TiO 2 Anatase Thin Films Deposited on Glass, Sapphire and Si Substrates

Stress Measurement of Thin Films by Substrate Curvature Method

Effect of Different Substrate Temperatures on Microstructure and Residual Stress of Ti Films

Residual Stress Study of SiO2/Pt/Pb(Zr,Ti)O3/Pt Multilayer Structure for Micro Electro Mechanical System Applications

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

Theoretical Model of Thermal Stress in the Film-Substrate System of Optical Thin Film

The Stress Properties of Oxide Thin Films Prepared by Reactive Electron Beam Evaporation

Study Status on the Impact of Stress on Structure and Properties of Films

Investigation on Internal Stress of SU-8 Photoresist Film