Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution
Neus Sabaté,Dietmar Vogel,Astrid Gollhardt,Jürgen Keller,Carles Cané,Isabel Gràcia,Joan R. Morante,Bernd Michel,Neus Sabate,Jrgen Keller,Carles Cane,Isabel Gracia
DOI: https://doi.org/10.1109/jmems.2006.879701
IF: 2.829
2007-04-01
Journal of Microelectromechanical Systems
Abstract:A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nanoelectromechanical systems.1634
engineering, electrical & electronic,nanoscience & nanotechnology,instruments & instrumentation,physics, applied