Abstract:Thin film/substrate structures are irreplaceable in many advanced devices, and their reliability is highly dependent on the distribution of residual stress. Stoney's formula is extensively used to analyze residual stress of thin film/substrate structure because of its simplicity and convenience, but it encounters difficulties when considering the film thickness and arbitrary residual stress. In this paper, the arbitrarily deformed film/substrate structure is modeled and characterized; hence, the full-field distribution of residual stress considering film thickness can be calculated directly from the morphology. Based on the theory of elasticity, seven governing equations including displacements, interfacial shear stresses, and residual stresses are established. Parameterization and method of constant variation are used to decouple the equation variables, and results of residual stress are expressed by Fourier series. By excavating the coordination relationships of curvature within three directions and releasing local parameter series terms, the expressions of residual stresses reduce computational complexity. The convergence of Fourier series and the order of emphasis are calculated by a randomly generated displacement field. The effectiveness and efficiency of the theory are verified by the finite element method, and the results are compared with those of ignoring film thickness. The results demonstrate the necessity of accounting for the film thickness, which is of great significance to the measurement of residual stress of thin film/substrate structures.

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