Analysis of stress in TiO2 thin film prepared with ion assisted deposition

YongJiang Zhao,TengChao Huang,Weidong Shen,Peifu Gu,Xu Liu
2005-01-01
Abstract:The stress of TiO2 thin films deposited with and without ion assisted deposition (IAD) was experimentally investigated. And the curvature of the deformed substrates was measured by profiler. Experimental results showed that TiO2 film stress with IAD was larger than that without IAD below the deposition temperature of 100°C, and that TiO2 film stress decreased with increasing film thickness. When the film thickness increased from 125 nm to 488 nm, the stress decreased from 392 MPa to 30 MPa. And anode voltage of the ion source affected TiO2 film stress. From 100 V to 190 V, the TiO2 film stress dropped from 164 MPa to 75 MPa.
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