Abstract:Nanoscale structures can produce extreme strain that enables unprecedented material properties, such as tailored electronic bandgap1-5, elevated superconducting temperature6,7 and enhanced electrocatalytic activity8,9. While uniform strains are known to elicit limited effects on heat flow10-15, the impact of inhomogeneous strains has remained elusive owing to the coexistence of interfaces16-20 and defects21-23. Here we address this gap by introducing inhomogeneous strain through bending individual silicon nanoribbons on a custom-fabricated microdevice and measuring its effect on thermal transport while characterizing the strain-dependent vibrational spectra with sub-nanometre resolution. Our results show that a strain gradient of 0.112% per nanometre could lead to a drastic thermal conductivity reduction of 34 ± 5%, in clear contrast to the nearly constant values measured under uniform strains10,12,14,15. We further map the local lattice vibrational spectra using electron energy-loss spectroscopy, which reveals phonon peak shifts of several millielectron-volts along the strain gradient. This unique phonon spectra broadening effect intensifies phonon scattering and substantially impedes thermal transport, as evidenced by first-principles calculations. Our work uncovers a crucial piece of the long-standing puzzle of lattice dynamics under inhomogeneous strain, which is absent under uniform strain and eludes conventional understanding.

Strain redistribution in free-standing bridge structure released from strained silicon-on-insulator

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

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Manipulation of Strain State in Silicon Nanoribbons by Top-Down Approach

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Mechanical Tensile Strain Induced Gate and Substrate Currents Change in N and P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

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Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Investigation of different strain configurations in gate-all-around silicon nanowire transistor

A New Method of Fabricating Strained Silicon Materials

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

Process Characterization for Strained Si on SOI CMOS Devices

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Influence of strain on the conduction band structure of strained silicon nanomembranes

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Suppressed thermal transport in silicon nanoribbons by inhomogeneous strain