Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Manipulation of Strain State in Silicon Nanoribbons by Top-Down Approach

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Nanoimprint-induced strain engineering of two-dimensional materials

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

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Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Strain Engineering and Mechanical Assembly of Silicon/germanium Nanomembranes

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Conversion of strain state from biaxial to uniaxial in strained silicon

Strain Modulated Electronic Properties of Silicon Nanoribbons with Armchair Edges

Tunable Mechanics and Micromechanism in Close-Knit Silicide-in-SiO 2 Core-Shell Nanowires

Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Realizing Single-Mode Lasing of Cadmium Selenide Nanoribbons with Strain Engineering

Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain

Achieving ultra-large tensile strain in nanoscale Si mechanical metamaterials

Buckling-Based Method for Measuring the Strain–Photonic Coupling Effect of GaAs Nanoribbons