Strain Modulated Electronic Properties of Silicon Nanoribbons with Armchair Edges

Chao Lian,Zailin Yang,Jun Ni
DOI: https://doi.org/10.1016/j.cplett.2013.01.029
IF: 2.719
2013-01-01
Chemical Physics Letters
Abstract:The electronic properties of silicon nanoribbons (SiNRs) with strain are studied by ab initio and tight-binding calculations. The strain modulated band gap variations of NA-ASiNRs depend on the family types categorized according to NA=3p, 3p+1 and 3p+2 and could be tuned over several hundreds meV. For (3p+2)-ASiNRs, the band gaps are proved to be linear as a function of strains and exactly closed under small tensile strains. Meanwhile, the structure of the lowest conduction and highest valence bands are Dirac-type dispersion. These results suggest that the strain modulated SiNRs may have potential applications in the field effect nanodevice.
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