Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states
Xuerui Cheng,Liying Jiang,Yuanyuan Li,Huanjun Zhang,Chuansheng Hu,Shiyu Xie,Miao Liu,Zeming Qi
DOI: https://doi.org/10.1016/j.apsusc.2020.146398
IF: 6.7
2020-08-01
Applied Surface Science
Abstract:<p>Understanding the interplay between the strain effect, optical property and electronic structure of a two-dimensional is important, especially for the atomic-thin semiconductors as it has important implication on developing straintronic devices. In this work, we investigate the interplay between strain effects and the electronic structure as well as the lattice vibrational modes of monolayer MoSe<sub>2</sub> across a wide-range of the strain from the tension all the way to the compression, using <em>in situ</em> Raman and photoluminescence (PL) spectroscopy as well as density functional calculations. Over the entire strain range, its direct bandgap gradually decreases when the strain changes from compression to tension. In particular, a strain-induced direct-to-indirect transition is observed at compressive strain of -1.3%. Such transition is originated from the opposite movement of conduction band at <em>K, Λ</em> points under strain. When the monolayer is under a tensile strain, unlike the compressive case, the movement of the valence bands plays a major role in causing a <em>K−Γ</em> crossover when the tensile strain reaches 3.3%. It indicates that the electronic structure of monolayer MoSe<sub>2</sub> can be fine tuned across a wide strain range.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films