Abstract:Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite extensive study, some properties of Si remain elusive. For example, the behaviour of Si under high pressure, in particular at the ultra-high strain rates characteristic of dynamic compression, has been a matter of debate for decades. A detailed understanding of how Si deforms is crucial for a variety of fields, ranging from planetary science to materials design. Simulations suggest that in Si the shear stress generated during shock compression is released inelastically, i.e., via a high-pressure phase transition, challenging the classical picture of relaxation via defect-mediated plasticity. However, experiments at the short timescales characteristic of shock compression are challenging, and direct evidence supporting either deformation mechanism remain elusive. Here, we use sub-picosecond, highly-monochromatic x-ray diffraction to study (100)-oriented single-crystal Si under laser-driven shock compression. We provide the first unambiguous, time-resolved picture of Si deformation at ultra-high strain rates, demonstrating the predicted inelastic shear release. Our results resolve the longstanding controversy on silicon deformation under dynamic compression, and provide direct proof of strain rate-dependent deformation mechanisms in a non-metallic system, which is key for the study of planetary-relevant materials.

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Phonon-limited mobility for electrons and holes in highly-strained silicon

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Strain-induced energy band gap opening in two-dimensional bilayered silicon film

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Indirect light absorption model for highly strained silicon infrared sensors

Influence of strain on the conduction band structure of strained silicon nanomembranes

Bandstructures of unstrained and strained silicon nanowire

First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain

Photo absorption enhancement in strained silicon nanowires: An atomistic study

The Tensile Effect on Crack Formation in Single Crystal Silicon Irradiated by Intense Pulsed Ion Beam

Conversion of strain state from biaxial to uniaxial in strained silicon

Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and tensile strain

Atomistic deformation mechanism of silicon under laser-driven shock compression

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Donor-bound-exciton strain microscopy in silicon devices

Strain Effects on Auger-Meitner Recombination in Silicon

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics