Abstract:Dwindling feature size pointed out the influence on performance of the pressure equipment and circuit integrated circuit (IC) can no longer be ignored. In fact, the pressure engineering is becoming more and more widely used in advanced IC manufacturing today processes to improve equipment performance. Introduce different stress on purpose to improve circuit performance, shallow trench—isolation (reference)—the stress, it is venereal well-applied device, active field is a byproduct of the technological process, and the influence of the circuit has become increasingly apparent behavior. This paper proposes a new kind of influence of whole process to characterize performance, without the stress on the rf/analog circuit layout and processing by considering detailed information. An accurate and efficient finite-element stress simulator developed a method extracting based on the stress distribution of IC from layout design. The existing MOSFET model to capture the effect also can increase of stress on the liquidity and threshold voltage. In order to enhance model, we can study the pressure without the influence of layout—dependent, in the real circuit performance optimization and establish corresponding strategies. This process has been used in a series of rf/analog IC design is based on a 90 nm CMOS process produced.

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