Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Parametric Studies of Nanoscale Through-Silicon Vias under the Reflow in Advanced Packaging

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Structural integrity optimization of 3D TSV package by analyzing crack behavior at TSV and BEOL

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

The thermal stress analysis in 3D IC integration with TSV interposer

The fatigue failure analysis of 3D SiP with Through Silicon Via

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

A Stress Evaluation Approach for the Silicon with Nano-Tsvs by Raman Spectroscopy

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

Etching scallop-less nano-TSV with F/O coupling plasma

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix