Abstract:New electronic devices with small size and low power consumption are in demand in recent years. Miniaturization and complex product are required in modern electronics for more functionality in the smaller electronic package. To overcome such issues, 3D packages or package on package (PoP) are introduced. The 3D packaging is stacking of chip on top of another which is emerging as a powerful technology that satisfies such integrated circuit (IC) package demands. A 3D package using through silicon vias (TSVs) has emerged as an effective technology for future interconnection requirements. The mismatch of coefficient of thermal expansion (CTE) of the SiO2 and copper used in TSV can induce a lot of thermal stresses. The stress developed at interfaces results in the interfacial delamination of TSV, which is mainly driven by a shear stress concentration at the point. The developed thermal stresses are critical for the thermo-mechanical reliability of the 3D package. In this paper, the effect of package structure on the failure metric of the 3D package has been studied. J-integral has been used to quantify the crack driving force. The crack is modeled at the TSV and BEOL (Back End of the Line) and the die-substrate thickness is varied and studied during chip attachment process and under thermal cycling load for optimizing the die and substrate thickness design [1]. Finite Element method have been used to analyze the thermo-mechanical stresses and fracture parameters in TSV structures 3D package. For this study, full field compact modeling methodology [2] has been leveraged for the ease of FEA using ANSYS Workbench 17.2. An optimized package assembly was obtained to reduce the crack driving energy at the TSV region and in the BEOL dielectric layer. A design approach has been proposed to mitigate brittle failure issues thus improving the thermo-mechanical reliability of the 3D package.

The fatigue failure analysis of 3D SiP with Through Silicon Via

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Computational Analysis of Mechanical and Electromigration Reliability Problems

System-Level Analysis of 3D ICs with Thermal TSVs

Reliable Design of Electroplated Copper Through Silicon Vias

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

Fatigue behaviour analysis of thermal cyclic loading for through-silicon via structures based on backstress stored energy density

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Interfacial Stress in Through Silicon Vias

The thermal stress analysis in 3D IC integration with TSV interposer

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Structural integrity optimization of 3D TSV package by analyzing crack behavior at TSV and BEOL

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Parametric Studies of Nanoscale Through-Silicon Vias under the Reflow in Advanced Packaging

ANALYSIS OF THERMAL STRESS IN THROUGH SILICON VIA OF INTERPOSER

Vibration and Drop Analysis of 3d Sip with Through Silicon Via

Thermal Stress and Reliability Analysis of TSV-Based 3-D ICs with a Novel Adaptive Strategy Finite Element Method

Simulation and Evaluation of Thermal Mechanical Reliability of 3D-Tsv Stack with Viscoelastic Underfill