Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

Vibration and Drop Analysis of 3d Sip with Through Silicon Via

Dynamic Substructure Method for Prediction of Solder Joint Reliability of IC Package under Drop Test

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The fatigue failure analysis of 3D SiP with Through Silicon Via

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Simulation and Evaluation of Thermal Mechanical Reliability of 3D-Tsv Stack with Viscoelastic Underfill

Mechanical Reliability Testing of Air-Gap Through-Silicon Vias

Research on deep RIE-based through-si-via micromachining for 3-D system-in-package integration

Reliable Design of Electroplated Copper Through Silicon Vias

Interposer Connection Reliability Using Double-Side Solder Bump for Board-Level Vertical Interconnection

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

Evaluation of Thermal Mechanical Reliability of Three Dimensional Packaging System with Redundant Tsvs

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Thermal Fatigue Analysis of Microbumps in a 3D TSV Integration Device

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Design and analysis of an I-shaped TSV structure for 3D SiP

Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging