Evaluation the layout dependences on strained 22nm NMOSFETs

Jieyu Qin,Gang Du,Ruqi Han,Xiaoyan Liu

DOI: https://doi.org/10.1109/ICSICT.2010.5667813

2010-01-01

Abstract:For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.

What problem does this paper attempt to address?

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Shuo Zhang,Wen-Yan Yin,Z. Jun Huang

DOI: https://doi.org/10.1109/NEMO.2018.8503483

2018-01-01

Abstract:Strain has been proved to be an effective approach to boost CMOS device performances. As channel length being scaled to sub-10nm, strain needs to be carefully optimized with quantum effects fully accounted for. In this work, optimal strain orientation and magnitude are identified for a ultra-thin-body (UTB) silicon double-gate (DG) P-MOSFET at 7nm gate length and 3nm channel thickness. The optimization is based on accurate quantum transport simulations using the nonequilibrium Green’s function (NEGF) approach and strained sixband k·p model. Various confinement and transport crystal orientations, different types of strain, and a range of strain strengths are considered. Device performances such as the ballistic ON-state current (ION) and subthreshold swing (SS) are extracted and compared. Analysis shows strong correlation between strain and source-to-drain tunneling (SDT) effect.
Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Wu, Wangran,Sun, Jiabao,Zhao, Yi

DOI: https://doi.org/10.1109/imfedk.2012.6218577

2012-01-01

Abstract:In this study, we experimentally examine the change of gate currents (Ig) and substrate currents (Isub) in n and pMOSFETs under different types mechanically applied stress. It is found that, under the uniaxial tensile stress, both Ig and Isub of pMOSFETs increase with the increase of the stress under the inversion condition. However, an opposite stress dependence in nMOSFETs could be observed for Ig and Isub. Similar changes were found for Ig and Isub of nMOSFETs under biaxial tensile stress. Furthermore, the results are explained by the strain altered band structure and the repopulation of carrier.
Layout Dependence of Total-Ionizing-dose Response in 65-Nm Bulk Si Pmosfet

Ren Zhexuan,An Xia,Li Gensong,Zhang Xing,Huang Ru

DOI: https://doi.org/10.1007/s11432-019-2795-7

2020-01-01

Science China Information Sciences

Abstract:>Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devices [1]. Since layout may affect the stress distribution, layout dependent effect(LDE)becomes a serious issue in advanced technology nodes.
Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Shuo Zhang,Jun Z. Huang,Zhenguo Zhao,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2017.8277037

2017-01-01

Abstract:Ultra-scaled silicon double-gate pMOSFETs with different channel lengths and thicknesses, as well as confinement and transport crystal orientations are simulated by the non-equilibrium Green's function (NEGF) approach employing the six-band k·p Hamiltonian. The ballistic ON-state current (I on ) and the subthreshold swing (SS) are extracted from the I-V curves to evaluate the device performances. It is found that the optimal crystal orientation is dramatically different for different channel lengths and thicknesses. To understand such device behaviors, band structures, average ballistic hole velocities, and source-to-drain tunneling are calculated and compared.
A two-dimensional analysis method on STI-aware layout-dependent stress effect

Xiaojian Li,Zuochang Ye,Yaohua Tan,Yan, Wang

DOI: https://doi.org/10.1109/TED.2012.2214389

IF: 3.1

2012-01-01

IEEE Transactions on Electron Devices

Abstract:Strain technology has become indispensable for present CMOS integrated circuits (ICs) as the feature size of transistor shrinks. In the meantime, stress-induced variation has also become an unavoidable problem. Unintentional stress, such as shallow trench isolation (STI)- induced stress, is one of the main variation sources and is strongly layout dependent. In this paper, a new 2-D layout-dependen...
Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Jing Yan,Junkang Li,Rui Zhang

DOI: https://doi.org/10.1109/ICICDT59917.2023.10332388

2023-01-01

Abstract:SiGe was utilized as the source and drain material to enhance the performance of Nanosheet pGAAFETs. Furthermore, the number of stacked nanosheets affects the stress on each nanosheet. This paper uses TCAD to simulate varied strains of each nanosheet of 3-stacked NSFETs with certain Ge content. After high-k metal gate (HKMG) processing, the bottom Si layer of 3-stacked NSFETs experienced the greatest stress, while the top layer experienced the least amount of stress. As the number of stacked nanosheets increases, the stress on the nanosheets decreases, leading to a decrease in $I_{dsat}$ enhancement.
Influence of contact positioning on the performance of stress induced MOSFETs

Xiang Zhang,Wei Wu,Gang Du,Ruqi Han,Xiaoyan Liu

DOI: https://doi.org/10.1109/EDSSC.2008.4760696

2008-01-01

Abstract:In this paper, strain induced Si MOSFETs with multiple contact positioning strategies are simulated by ISE TCAD tool. The strain distribution of the MOSFETs with symmetric and asymmetric drain/source structure is investigated. The performance of the devices such as the Idsat and transfer characteristics is also simulated and compared. The results will help to model the characteristics of MOSFETs considering layout dependence. © 2008 IEEE.
Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Chang-Chun Lee,Pei-Chen Huang

DOI: https://doi.org/10.1166/jnn.2020.16909

2020-02-01

Abstract:Enhancing the mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) with narrow channel widths is highly sensitive to the stress effects of Si channel when related advanced strain engineering is introduced and is compatible with semiconductor processes. In practice, layouts have significant effect on the device performance, especially for the protruding gate width on shallow trench isolation structures. The geometric parameter is investigated by systematically analysing an n-channel MOSFET composed of silicon-carbon (SiC) stressors embedded in the source and drain (S/D) regions and a tensile contact etch stop layer (CESL) using three-dimensional finite element simulation. Tensile CESL (1.1 GPa) and a SiC S/D stressor with a carbon mole fraction of 1.65% are loaded on the structure. The difference in the interactive percentages between the mechanical bending effect of the CESL from the top of the poly gate and the downward force of the CESL adjacent to the spacer sidewall of the gate occurs when the protruding gate width is increased. Results indicate that mobility was highly enhanced by approximately 72.5% at a width of approximately 0.2 μm. The mechanical bending effect becomes dominant when the gate width is more than 0.2 μm. Consequently, the mobility gain decays and consequently converges toward a constant.
Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

Jiying Xue,Zuochang Ye,Yangdong Deng,Hongrui Wang,Liu Yang,Zhiping Yu

DOI: https://doi.org/10.1145/1687399.1687497

2009-01-01

Abstract:With the continuous shrinking of feature size, various effects due to shallow-trench-isolation (STI) stress are becoming more and more significant. The resulting nonuniform distribution of stress affects the MOSFET characteristics and hence changes the circuit behavior. This paper proposes a complete flow to characterize the influence of STI stress on performance of RF/analog circuits based on layout design and process information. An accurate and efficient FEM-based stress simulator has been developed to handle the layout dependence. A comprehensive MOSFET model is also proposed to capture the effects of STI stress on mobility, threshold voltage, and leakage current. The influence of layout-dependent STI stress on the circuit performance is further studied, and the corresponding optimization strategies to circuit design are discussed. A realistic PLL design realized using 90nm CMOS technology is used as a test case for the proposed approach.
Study of nano-regime strained MOSFETs with temperature effects

Hsin-Chia Yang,Wen-Shiang Liao,Min-Ru Peng,Mu-Chun Wang

DOI: https://doi.org/10.1109/ISNE.2010.5669166

2010-01-01

Abstract:Strained engineering in nano process technology is considered to be a promising enhancements on the electric characteristics of MOSFET devices. Both tensile and compressive strains are applied to NMOS and PMOS individually using silicon nitride as contact etching stop layer (CESL). As appeared in this study, the electrical characteristics are to be compared with or without strain on 10μm/10μm (channel length/ width) at various temperatures, and more benefits of compressive CESL and tensile CESL for NMOS and PMOS, respectively, are seen. One thus goes on to check with the trans-conductance (gm) and the leakage current. The data that were shown assure us the next-generation promising devices.
Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Hui Min Lee,En-Xiao Liu,G. S. Samudra,Er-Ping Li

DOI: https://doi.org/10.1109/edaps.2012.6469420

2012-01-01

Abstract:Evaluation of the impact caused by Through-Silicon Vias (TSV) induced thermo-mechanical stress on device performance is becoming important due to the close proximity between TSVs and the semiconductor devices in 3D integration. From the literatures, there exist discrepancies between theory, simulated and experimental results presented. For accurate predictions, we simulated stress build-up by taking the full CMOS process flow into consideration. We considered the interaction between TSV, stressors such as tensile stress liner and Shallow Trench Isolation (STI) and device channel. From the results, it was found that the nMOSFET Ion variation is less than 2% at Keep Out Zone (KOZ) of 1 μm due to TSV induced stress while the Ion variation is about 30% due to the tensile stress liner. Hence, the impact of TSV induced stress on nMOSFET performance is insignificant compared to that of tensile stress liner in the device.
Modeling of layout-dependent STI stress in 65nm Technology

JiYing Xue,Yang Dong Steve Deng,Zuochang Ye,Liu Yang,Zhiping Yu

DOI: https://doi.org/10.1109/ASICON.2009.5351335

2009-01-01

Abstract:In this work, we investigate the impact of layout shapes on STI stress. Based on a stress simulator developed by us, we propose analytical models to correlate the STI stress and the layout parameters. Our model is validated by data collected from a commercial 65 nm process. The experimental results prove that the device characteristics predicted by our model closely match the measured data.
Characteristics of 25nm Mosfets with Mechanical Strain in the Channel

T Wu,XY Liu,G Du,JF Kang,RQ Han

DOI: https://doi.org/10.1109/icsict.2004.1435017

2004-01-01

Abstract:The characteristics of typical 25nm p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as drive current and sub-threshold characteristics are investigated.
A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Jiying Xue,Yangdong Deng,Zuochang Ye,Hongrui Wang,Liu Yang,Zhiping Yu

DOI: https://doi.org/10.1109/tvlsi.2010.2102374

2012-01-01

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Abstract:With the continuous shrinking of the feature size, the effect of stress on the performance of the IC device and circuit can no longer be ignored. In fact, stress engineering is becoming more and more widely used today in advanced IC manufacture processes to improve device performance. Different from the intentionally introduced stresses to improve circuit performance, the shallow-trench-isolation (STI) stress, which is exerted by STI wells on the active area of devices, is a by-product of the fabrication process and has increasingly significant impact on the circuit behavior. This paper proposes a complete flow to characterize the influence of STI stress on the performance of RF/analog circuits by considering detailed layout and process information. An accurate and efficient finite-element method-based stress simulator has been developed to extract stress distribution from layouts of IC designs. The existing MOSFET model is also enhanced to capture the effects of stress on mobility, threshold voltage. With the enhanced model, we are able to study the influence of layout-dependent STI stress on the performance of real circuits and establish corresponding optimization strategies. The proposed flow has been applied to a series of RF/analog IC designs based on a 90-nm CMOS technology.
Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Pei-Chen Huang,Chang-Chun Lee

DOI: https://doi.org/10.3390/ma14185226

IF: 3.4

2021-09-11

Materials

Abstract:Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demonstrated to analyze the stress-affected zone of through-silicon via (TSV) and its influences on a planar metal oxide semiconductor field transistor (MOSFET) device. The feasibility of the widely adopted analytical solution for TSV stress-affected zone estimation, Lamé radial stress solution, is investigated and compared with the FEA-based submodeling approach. Analytic results reveal that the Lamé stress solution overestimates the TSV-induced stress in the concerned device by over 50%, and the difference in the estimated results of device performance between Lamé stress solution and FEA simulation can reach 22%. Moreover, a silicon–germanium-based lattice mismatch stressor is designed in a silicon p-type MOSFET, and its effects are analyzed and compared with those of TSV residual stress. The S/D stressor dominates the stress status of the device channel. The demonstrated FEA-based submodeling approach is effective in analyzing the stress impact from packaging and device-level components and estimating the KOZ issue in advanced electronic packaging.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Wei Tai,Lele Jiang,Wang Lei,Song Wen,Lifu Chang,Yuhua Cheng

DOI: https://doi.org/10.1109/asicon.2013.6812059

2013-01-01

Abstract:In this paper, we study the impact of stress effect on n-MOSFET characteristics, from neighborhood device active area (NDAA) and surrounding shallow trench isolation (SSTI), in addition to the stress from its own active area (AA) and shallow trench isolation (STI). With a group of test structures at a 40nm technology, measurement data are performed and analyzed to understand the impacts of the neighbor device active area width(NDAAW), located in the direction along the channel length, on the device parameters, such as saturation drain current (Idsat), threshold voltage (Vth), and leakage current (Ioff). It was found that the Idsat increases by similar to 13.6%, Vth decreases by similar to 15.7%, and Ioff increases by even five times, compared with the standard devices without these surrounding devices, due to the additional impacts from the NDAA and SSTI. It is suggested that some parameters such as STIW, NDAAW and SSTIW should be added to the existing SPICE models as new parameters to consider the surrounding devices effects for accurate modeling of n-MOSFET in 40nm process technology. Moreover, the impacts of stress effects from neighborhood devices to the n-MOSFET characteristics should be considered in designs of standard cells in 40nm and below processes.
Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Chang-Chun Lee,Pei-Chen Huang,Chi-Wei Wang

DOI: https://doi.org/10.1115/imece2019-10450

2019-11-11

Abstract:Abstract Through-silicon via (TSV) technique, is widely adopted as the vertical interconnection technology of three-dimensional integrated circuit packaging architecture. However, fabrication process-induced residual stress occurred in TSV during annealing and introduced the subsequent thermal–mechanical stress into silicon-based interposer. Aforementioned residual stress will affect the performance and electric stability of p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) located around TSV. Accordingly, this study is focused on the influences of TSV layout with intrinsic residual stress on concerned pMOSFET performance. Process-oriented finite element analysis (FEA) is performed to simulate stress distribution of pMOSFET when concerned device channel region was affected by TSV residual stress and embedded SiGe alloy. To conquer the difficulty of FEA construction on TSV and pMOSFET with significant scale mismatch in same FEA model, the global–local submodeling technology is adopted to manage the balance between model complexity and numerical convergence. The residual stress magnitude effect of different designed TSV diameter on concerned channel stress components is extracted to estimate its influence on pMOSFET with scaled gate width. The presented results indicated that increased TSV residual stress could obviously reduce performance of concerned device. It should be noted that the S/D stressor remarkably dominated mobility gain of strained pMOSFET.
Junction Integrity for 28nm High-k Nmosfets with Thermal Stress

Yu-Chen Lin,Kai-Chun Zhan,Ji-Min Zhang,Jian-Ming Chen,Cheng-Hsun-Tony Chang,Shea-Jue Wang,Mu-Chun Wang

DOI: https://doi.org/10.1109/ickii50300.2020.9318948

2020-01-01

Abstract:Junction integrity in OFF-state current of an n-channel MOSFET (nMOSFET) plays an important role. Besides the electrical performance of leakage current and breakdown voltage for source/drain junction, it is still necessary to consider the gate-induced drain leakage (GIDL) effect. The test to screen out the yield or reliability concern early demands the thermal stress to enhance the latent defect under the overlay interface between drain and gate zones. It is beneficial to investigate the fringe gate leakage with the relationship of the heat increase and the integrity of 28nm high-k (HK) gate dielectric. As the stress temperature increases, the junction leakage and GIDL effect are gradually increased, especially at the higher stress temperature circumstance.
Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

S Choi,W Sun,I Lee,H Shin

DOI: https://doi.org/10.1166/jnn.2016.12239

Abstract:The stress effect in uniaxially strained (100)- and (110)-oriented single-gate (SG) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was analyzed. A model of a silicon-thickness-dependent deformation potential (D(as_T(si))) was used for accurate calculation of mobility using a Schrödinger-Poisson solver. The simulation results obtained using the D(ac_T(si)) model exhibited excellent agreement with the measured mobility for both strained and unstrained conditions. The enhancements in electron mobility under conditions of longitudinal tensile strain were analyzed as a function of the silicon thickness and strain. As the silicon thickness decreased, the mobility enhancement in (100) SG MOSFETs reached a peak, whereas it diminished in (110) SG MOSFETs. As the strain increased, mobility enhancement increased in the (110) case, whereas it saturated in the (100) case. Therefore, larger mobility enhancement in the (110) orientation is expected. These differences in enhancement between the (100) and (110) cases resulted from differences in the quantization mass, which affect the energy difference between the 1st subbands of two-fold and four-fold degenerate valleys, as well as occupancy change.
MOSFET Performance Manufactured on &lt;100&gt; Silicon Wafer Using CESL Strain Technology with Temperature Effect

Mu‐Chun Wang,Hsin Chia Yang,Wen Shiang Liao

DOI: https://doi.org/10.4028/www.scientific.net/amr.287-290.2974

2011-01-01

Advanced Materials Research

Abstract:Tensile and compressive silicon nitride films as contact etch stop layers (CESL) are deposited on the poly-gate of N/PMOSFETs providing the strains to the channels. Different strained engineering technologies, previously determined by various processes and firmly verified by testing, set up different environments for carriers to transport. It is quite reasonably conclusive that compressive CESL benefits NMOS devices more while tensile CESL favors PMOS devices more. This phenomenon may be also true as the temperature effects are taken into concern. Higher temperatures tend to thermally disturb the carriers making the effective mass modified. The consistency and the known techniques can be applied to the nano-node generation development.

Evaluation the layout dependences on strained 22nm NMOSFETs

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Layout Dependence of Total-Ionizing-dose Response in 65-Nm Bulk Si Pmosfet

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

A two-dimensional analysis method on STI-aware layout-dependent stress effect

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Influence of contact positioning on the performance of stress induced MOSFETs

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

Study of nano-regime strained MOSFETs with temperature effects

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Modeling of layout-dependent STI stress in 65nm Technology

Characteristics of 25nm Mosfets with Mechanical Strain in the Channel

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Junction Integrity for 28nm High-k Nmosfets with Thermal Stress

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

MOSFET Performance Manufactured on &amp;lt;100&amp;gt; Silicon Wafer Using CESL Strain Technology with Temperature Effect

MOSFET Performance Manufactured on <100> Silicon Wafer Using CESL Strain Technology with Temperature Effect