Abstract:Abstract Through-silicon via (TSV) technique, is widely adopted as the vertical interconnection technology of three-dimensional integrated circuit packaging architecture. However, fabrication process-induced residual stress occurred in TSV during annealing and introduced the subsequent thermal–mechanical stress into silicon-based interposer. Aforementioned residual stress will affect the performance and electric stability of p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) located around TSV. Accordingly, this study is focused on the influences of TSV layout with intrinsic residual stress on concerned pMOSFET performance. Process-oriented finite element analysis (FEA) is performed to simulate stress distribution of pMOSFET when concerned device channel region was affected by TSV residual stress and embedded SiGe alloy. To conquer the difficulty of FEA construction on TSV and pMOSFET with significant scale mismatch in same FEA model, the global–local submodeling technology is adopted to manage the balance between model complexity and numerical convergence. The residual stress magnitude effect of different designed TSV diameter on concerned channel stress components is extracted to estimate its influence on pMOSFET with scaled gate width. The presented results indicated that increased TSV residual stress could obviously reduce performance of concerned device. It should be noted that the S/D stressor remarkably dominated mobility gain of strained pMOSFET.

Influence of contact positioning on the performance of stress induced MOSFETs

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

MOSFET Performance Manufactured on &lt;100&gt; Silicon Wafer Using CESL Strain Technology with Temperature Effect

Characteristics of 25nm Mosfets with Mechanical Strain in the Channel

Impact of Stress Induced by Stressors on Hot Carrier Reliability of Strained Nmosfets

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Evaluation the layout dependences on strained 22nm NMOSFETs

Strained Pmosfets With Sige Channel And Embedded Sige Source/Drain Stressor Under Heating And Hot-Carrier Stresses

A stress concentration MOSFET structure

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Fully Tensile Strained Partial Silicon-on-insulator N-Type Lateral-Double-diffused Metal-Oxide-semiconductor Field Effect Transistor Using Localized Contact Etching Stop Layers

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel