Abstract:Abstract Through-silicon via (TSV) technique, is widely adopted as the vertical interconnection technology of three-dimensional integrated circuit packaging architecture. However, fabrication process-induced residual stress occurred in TSV during annealing and introduced the subsequent thermal–mechanical stress into silicon-based interposer. Aforementioned residual stress will affect the performance and electric stability of p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) located around TSV. Accordingly, this study is focused on the influences of TSV layout with intrinsic residual stress on concerned pMOSFET performance. Process-oriented finite element analysis (FEA) is performed to simulate stress distribution of pMOSFET when concerned device channel region was affected by TSV residual stress and embedded SiGe alloy. To conquer the difficulty of FEA construction on TSV and pMOSFET with significant scale mismatch in same FEA model, the global–local submodeling technology is adopted to manage the balance between model complexity and numerical convergence. The residual stress magnitude effect of different designed TSV diameter on concerned channel stress components is extracted to estimate its influence on pMOSFET with scaled gate width. The presented results indicated that increased TSV residual stress could obviously reduce performance of concerned device. It should be noted that the S/D stressor remarkably dominated mobility gain of strained pMOSFET.

Simulation of Layout-Dependent Sti Stress and Its Impact on Circuit Performance

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Modeling of layout-dependent STI stress in 65nm Technology

A two-dimensional analysis method on STI-aware layout-dependent stress effect

An Efficient Finite-Element Method-Based Stress Simulator for Integrated Circuit Optimization Designs

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Massively Parallel Finite Element Simulator for Full-Chip STI Stress Analysis

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Analysis of Influence of STI-induced Stress on 90 Nm SONOS Memory

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Stress Modeling for the Impacts of Flip Chip Process on the Ultralow-K Chips

Circuit optimization using device layout motifs

A Physical-Based Pmosfets Threshold Voltage Model Including the STI Stress Effect

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

Channel Stress Engineering Through Source/Drain Recess Optimization and Its Process Variation Study for 5 Nm-Node FinFETs

Influence of contact positioning on the performance of stress induced MOSFETs