Abstract:Because of the precise control of film thickness, atomic layer deposition (ALD) offers significant advantages in fabricating high-quality superlattice films. For the first time, a SiNx/SiO2 superlattice with an ultrathin SiNx sublayer layer (1.5 nm) and a SiO2 barrier layer (3 nm) was successfully fabricated using plasma-enhanced ALD. Transmission electron microscopy (TEM) measurements demonstrate the maintenance of multilayer structures with smooth interfaces. Next, the annealing effect on the microstructural, optical, and chemical properties of these SiNx/SiO2 superlattice structures was thoroughly investigated. With increasing annealing temperature, X-ray reflection (XRR) and TEM measurements revealed consistent changes in interface, morphology, roughness, density, and thickness. After high-temperature annealing, Fourier-transform infrared spectroscopy (FTIR) measurements combined with X-ray photoelectron spectroscopy (XPS) measurements revealed significant reductions in Si–H-related defects and absorption bands. Photoluminescence (PL) was used to characterize the light emission property, and it was discovered that increasing the annealing temperature decreased the PL peak intensity at ∼550 and 900 nm. The silicon nanocrystals (Si–NCs)-related PL peak (∼900 nm) became dominant as the annealing temperature increased. The findings in this paper shed light on the annealing effect on the new superlattice material prepared via ALD. Improved PL properties of this type of superlattice are expected and can be obtained in future research by optimizing the ALD deposition process and annealing parameters.

Residual Strain of Silicon-on-AlN Novel Structure

Fabrication of Silicon-on-aln Novel Structure and Its Residual Strain Characterization

Geometrical Deviation and Residual Strain in Novel Silicon-On-Aluminium-Nitride Bonded Wafers

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Fabrication of SOI Structure with AlN Film As Buried Insulator by Ion-Cut Process

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

MBE-grown AlN-on-Si with Improved Crystalline Quality by Using Silicon-on-insulator Substrates

Preparation of Large Area Aln Films on Silicon and Its Application to the Soi Structure

Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation

Role of an Ultra-Thin Aln/Gan Superlattice Interlayer on the Strain Engineering of Gan Films Grown on Si(110) and Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Residual Stress of AlN Films RF Sputter Deposited on Si(111) Substrate

Annealing effect on structures and luminescence of amorphous SiN films