Abstract:Unintentionally doped InN has been grown onto an atomically flat AlN intermediate layer on top of the Si(111) substrate using plasma‐assisted molecular beam epitaxy (PA‐MBE). Though there are lots of micrometer‐size indium droplets randomly distributed on the top of the surface, the highest electron mobility of this InN thin film measured at room temperature by van der Pauw method is still higher than 1000 cm2/V s with a carrier concentration of 5–8.9 × 1018 cm–3. A symmetrical X‐ray rocking curve is measured and the full‐width‐at‐half‐maximum (FWHM) of this sample is 1089 arcsec. In the meantime, the threading dislocation (TD) density of this material is estimated to around 9.8 × 108 cm–2 – 7.5 × 109 cm–2 depending on the probing regions that are studied by the etching technique and field‐emission scanning electron microscopy (FE‐SEM). (2 × 1) in situ reflection high‐energy electron diffraction (RHEED) patterns show that this sample is grown under In‐rich environment with possible In‐terminated surface. From the FE‐SEM pictures which were taken from the samples after 10 minutes etching in hydrochloride, the surface morphology shows In‐polarity‐like patterns that coincide with those procured in RHEED. To select and grow a high‐quality laminated AlN as intermediate layer is believed to be the major step in obtaining this high electron mobility InN thin film on Si substrate. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Aln Thin Films Grown by Ion-Beam-Enhanced Deposition and Its Application to Soi Materials

Preparation of Large Area Aln Films on Silicon and Its Application to the Soi Structure

Fabrication of SOI Structure with AlN Film As Buried Insulator by Ion-Cut Process

Reactive Partially Ionized Beam Deposition of Aln Thin Films

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Preparing aluminum nitride thin film by atomic layer deposition

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Fabrication of Aln Thin Films on Different Substrates at Ambient Temperature

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Epitaxial Growth of High Quality AlN Films on Si Substrates

Deposition of AIN Thin Films on Silicon by DC Magnetron Reactive Sputtering

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Growth of Aluminum Nitride on a Silicon Nitride Substrate for Hybrid Photonic Circuits

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Characterisation of Aluminium Nitride Films and Surface Acoustic Wave Devices for Microfluidic Applications