Abstract:Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO2), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO2/aluminum-oxygen-nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m-1 K-1 and the TBC of both interfaces at roughly 100 MW m-2 K-1. These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.

Fabrication of SOI Structure with AlN Film As Buried Insulator by Ion-Cut Process

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Fabrication of Silicon-on-aln Novel Structure and Its Residual Strain Characterization

Aln Thin Films Grown by Ion-Beam-Enhanced Deposition and Its Application to Soi Materials

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Residual Strain of Silicon-on-AlN Novel Structure

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

Preparation of Large Area Aln Films on Silicon and Its Application to the Soi Structure

An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Optical Effects and Microstructure of Buried Insulator Layer Formed by O+ and N+ Co-implantation

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Tetrahedral Amorphous-Carbon Thin Films for Silicon-on-insulator Application

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

A novel structure of high voltage SOI device with Composite Dielectric buried layer