Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile

Enhanced Critical Electrical Characteristics in a Nanoscale Low-Voltage SOI MOSFET With Dual Tunnel Diode

A Novel Nanoscaled Device Concept: Quasi-Soi MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Design Guideline of an Ultra-Thin Body SOI MOSFET for Low-Power and High-Performance Applications

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

Self-align Recessed Source Drain Ultrathin Body SOI MOSFET

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Design Considerations Of Ultra-Thin Body Soi Mosfets

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

On the Performance of Single-Gated Ultrathin-Body SOI Schottky-barrier MOSFETs

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

Recessed source/drain for scaling SOI MOSFET to the limit

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology