Abstract:The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator (SOI) pMOSFETs have been studied by comparing with those of the back transistor of SOI nMOSFETs fabricated on the same wafer. The transistors were irradiated by 60Co {\gamma}-rays with various doses, and the front transistors are biased in a Float-State and Off-State, respectively, during irradiation. The total dose radiation responses of the back transistors are characterized by their threshold voltage shifts. The results show that the total dose radiation response of the back transistor of SOI pMOSFETs, similar to that of SOI nMOSFETs, depends greatly on their bias conditions during irradiation. However, with the Float-State bias, rather than the Off-State bias, the back transistors of SOI pMOSFETs reveal a much higher sensitivity to total dose radiation, which is contrary to those of SOI nMOSFETs. In addition, it is also found that the total dose radiation effect of the back transistor of SOI pMOSFETs irradiated with Off-State bias, as well as that of the SOI nMOSFETs, exhibits an increasing trend as the channel length decreases. The annealing response of the back transistors after irradiation at room temperature without bias, characterized by their threshold voltage shifts, indicates that there is a relatively complex annealing mechanism associated with channel length and type, bias condition during irradiation. In particular, for all the transistors irradiated with Off-State bias, their back transistors show an abnormal annealing effect during early annealing. All the results have been discussed and analyzed in detail by the aid of simulation.

Radiation of SOI MOSFET with Shallow Source

Simulation for a Novel Vertical SOI Configuration

Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode Layer

Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

The Total Dose Radiation Hardened Mosfet With Good High-Temperatue Performance

The total dose radiation effect of PSOI MOSFET

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

Study of the Dose Rate Effect of 180 Nm Nmosfets

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

A New Type of Si-Based MOSFET for Radiation Reinforcement

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation