Abstract:This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics. The design incorporates several modifications to control and reduce the electric field concentration within the channel. These modifications include relocating the transistor channel to sub-regions near the source and drain, adjusting the position of the gate electrode closer to the source, introducing an aluminum layer beneath the channel, and integrating an oxide layer adjacent to the gate. The results show that the AlOx-MESFET configuration exhibits a remarkable increase of 128% in breakdown voltage and 156% in peak power. Furthermore, due to enhanced conductivity and a significant reduction in gate-drain capacitance, there is a notable improvement of 53% in the cut-off frequency and a 28% increase in the maximum oscillation frequency. Additionally, the current gain experiences a boost of 15%. The improved breakdown voltage and peak power make it suitable for applications requiring robust performance under high voltage and power conditions. The increased maximum oscillation frequency and cut-off frequency make it ideal for high-frequency applications where fast signal processing is crucial. Moreover, the enhanced current gain ensures efficient amplification of signals. The introduced SOI MESFET structure with its modifications offers significant improvements in various performance metrics. It provides high oscillation frequency, better breakdown voltage and good cut-off frequency, and current gain compared to the traditional designs. These enhancements make it a highly desirable choice for applications that demand high-frequency and high-power capabilities.

0.25 Mm SOI RF nMOSFETs depleted partially

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Fully depleted SOI devices with TiN gate and elevated source-drain structures

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The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

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A Novel Fully-Depleted Dual-Gate MOSFET

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Research of SOI CMOS Integrated Circuit Based on Fully Depleted Technology

Patterned silicon-on-insulator technology for RF Power LDMOSFET

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era

Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications

Advances in Fully Depleted CMOS/SOI Technology

Performance of Submicron and Deep-Submicron Conventional/ldd MOSFET

A Novel Nanoscaled Device Concept: Quasi-Soi MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET

Design of a Dual-Material Gate LDMOS

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure