Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

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Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

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Scaling Capability Improvement of Silicon-on-void (SOV) MOSFET

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Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

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Scaling carbon nanotube CMOS FETs towards quantum limit

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Scaling of Ingaas Mosfets into Deep-Submicron

High performance tunnel field-effect transistor by gate and source engineering.