Abstract:In this manuscript, analog/RF performance, linearity, harmonic distortion, small signal AC performance and scattering parameter (S-parameters) metrics of gate-stack DM nanowire (NW) FET (4H-silicon carbide) have been critically examined with nanowire field effect transistor (NW FET) (silicon), nanowire (NW) field effect transistor (FET) (silicon carbide) and dual metal (DM) nanowire field effect transistor (NW FET) (silicon carbide). For a fair comparison, electrical characteristics like the majority and minority charge carrier concentration, energy and velocity in ON-State (V gs = V ds = 1.0 V) and OFF-State (V gs = 0.0 V and V ds = 1.0 V) have been evaluated. This paper combines the advantages of dielectric material having gate-stack HfO 2 (Hafnium oxide) with high-k and Al 2 O 3 (aluminium oxide) to attain a superior I on /I off ratio, intrinsic gain (g m /g d ), GFP (gain frequency product), GBWP (gain bandwidth product), TFP (transconductance frequency product), GTFP (gain transconductance frequency product), early voltage (V ea ), maximum frequency of oscillation (f max ), g m2 , g m3 (higher-order transconductances), UPG (unilateral power gain), maximum transducer power gain and delay. To check the relevancy of the device for RFIC applications, linearity assessment is performed by evaluating its several figure of merits like VIP 2 , voltage interception points (VIP 3 ), third-order intercept point (IIP 3 ), 1-dB compression point, third-order intermodulation distortion (IMD 3 ), HD 2 , HD 3 , harmonic distortions (THD) for all contemplated devices. Additionally, scattering parameters have been examined to affirm the small signal performance. This is being deduced further that our proposed device analysis exhibits improved electrical and linearity characteristics, and all of these factors contribute to its use in high-power and high-frequency implementation.

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