Abstract:This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics. The design incorporates several modifications to control and reduce the electric field concentration within the channel. These modifications include relocating the transistor channel to sub-regions near the source and drain, adjusting the position of the gate electrode closer to the source, introducing an aluminum layer beneath the channel, and integrating an oxide layer adjacent to the gate. The results show that the AlOx-MESFET configuration exhibits a remarkable increase of 128% in breakdown voltage and 156% in peak power. Furthermore, due to enhanced conductivity and a significant reduction in gate-drain capacitance, there is a notable improvement of 53% in the cut-off frequency and a 28% increase in the maximum oscillation frequency. Additionally, the current gain experiences a boost of 15%. The improved breakdown voltage and peak power make it suitable for applications requiring robust performance under high voltage and power conditions. The increased maximum oscillation frequency and cut-off frequency make it ideal for high-frequency applications where fast signal processing is crucial. Moreover, the enhanced current gain ensures efficient amplification of signals. The introduced SOI MESFET structure with its modifications offers significant improvements in various performance metrics. It provides high oscillation frequency, better breakdown voltage and good cut-off frequency, and current gain compared to the traditional designs. These enhancements make it a highly desirable choice for applications that demand high-frequency and high-power capabilities.

The Localized-SOI MOSFET as a Candidate for Analog/RF Applications

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Characterization of DC, Analog/rf, and Low Frequency Noise in Silicon-on-insulator Nmosfets with Different Body-Contact Structures

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

SOI Active and Passive Integrated Devices for RFIC Applications

High Performance SOI Gate-Bulk Connected LCMOSFET for RF Power Amplifier Application in Short and Medium Range Wireless Communication Systems

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Patterned silicon-on-insulator technology for RF Power LDMOSFET

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology

Design and Fabrication of LDMOS Power Device on SOI Substrate

RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETs

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Analysis of Off-State and On-State Performance in A Silicon-On-Insulator Power Mosfet with A Low-K Dielectric Trench

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications