Abstract:This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics. The design incorporates several modifications to control and reduce the electric field concentration within the channel. These modifications include relocating the transistor channel to sub-regions near the source and drain, adjusting the position of the gate electrode closer to the source, introducing an aluminum layer beneath the channel, and integrating an oxide layer adjacent to the gate. The results show that the AlOx-MESFET configuration exhibits a remarkable increase of 128% in breakdown voltage and 156% in peak power. Furthermore, due to enhanced conductivity and a significant reduction in gate-drain capacitance, there is a notable improvement of 53% in the cut-off frequency and a 28% increase in the maximum oscillation frequency. Additionally, the current gain experiences a boost of 15%. The improved breakdown voltage and peak power make it suitable for applications requiring robust performance under high voltage and power conditions. The increased maximum oscillation frequency and cut-off frequency make it ideal for high-frequency applications where fast signal processing is crucial. Moreover, the enhanced current gain ensures efficient amplification of signals. The introduced SOI MESFET structure with its modifications offers significant improvements in various performance metrics. It provides high oscillation frequency, better breakdown voltage and good cut-off frequency, and current gain compared to the traditional designs. These enhancements make it a highly desirable choice for applications that demand high-frequency and high-power capabilities.

RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETs

A Comparative Study on Analog/rf Performance of UTB GOI and SOI Devices

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Simulation for a Novel Vertical SOI Configuration

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Scaling Capability of Goi and Soi Devices

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

On the Performance of Single-Gated Ultrathin-Body SOI Schottky-barrier MOSFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Characterization of DC, Analog/rf, and Low Frequency Noise in Silicon-on-insulator Nmosfets with Different Body-Contact Structures

Design Guideline of an Ultra-Thin Body SOI MOSFET for Low-Power and High-Performance Applications

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applications

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Investigation of Thermal Noise in UTB GOI and SOI Devices

High Performance SOI Gate-Bulk Connected LCMOSFET for RF Power Amplifier Application in Short and Medium Range Wireless Communication Systems

Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices