Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

A Comparative Study on Analog/rf Performance of UTB GOI and SOI Devices

RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETs

Investigation of Thermal Noise in UTB GOI and SOI Devices

Simulation for a Novel Vertical SOI Configuration

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Scaling Capability of Goi and Soi Devices

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Advantages and challenges of high performance CMOS on SOI

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

SOI CMOS technology for RF/MMIC applications - yes or no?

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal–oxide–semiconductor field-effect transistors with tunnel diode body contact structures

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applications

Assessment of 180 Nm Double SOI Technology for Analog Front-End Design with Back-Gate Voltage

High Performance SOI Gate-Bulk Connected LCMOSFET for RF Power Amplifier Application in Short and Medium Range Wireless Communication Systems

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

On the Performance of Single-Gated Ultrathin-Body SOI Schottky-barrier MOSFETs