Abstract:This work analytically models the crucial physical mechanisms accountable for the defect kinetics and the degradation of base current in PNP BJTs. Both the space charge and bimolecular mechanisms have been incorporated to elicit the defect dynamics (oxide charge and interface trap) following ionization radiation. Thereafter, two novel insights into the ionization damage on SiO2 of bipolar structure are provided, which includes the coupled effect of the two defect mechanisms and the existence of an “additional” hydrogen sensitivity in the bimolecular mechanism. A previous device model has been updated to describe the response of base current degradation to defects build-up. Further, a closed-form compact expression for the excess base current is provided, which is an explicit function of the total ionizing dose, dose rate, and hydrogen concentration. The new model closely fits the experimental data from several devices, including RF25 capacitor, gate controlled lateral PNP BJT, and LM124 amplifier. Our model delivers a practical approach to deduct the oxide charge modulation effect on excess base current. Thereafter, the relation between the modified excess base current and total ionizing dose is linear. Furthermore, this work suggests a practical approach, called as “offset current approach”, to predict the excess base in PNP BJTs at low dose rate.

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A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

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A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

Combined effect of total ionizing dose and electromagnetic pulse on MOSFET devices

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Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Modeling and Simulation of Ionizing Radiation Effect on Ferroelectric Field-Effect Transistor

Analytical Model for Total Ionizing Dose-Induced Excess Base Current in PNP BJTs

Theoretic Simulation for CMOS Device on Total Dose Radiation Response

Improved Buildup Model for Radiation-Induced Defects in MOSFET Isolation Oxides

Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Temperature and Total Ionizing Dose Effects of SiC MOSFET and Their Synergistic Characteristics