Abstract:In this article, the degradation mechanisms of radiation-hardened vertical double-diffused MOSFETs (VD-MOSFET) experiencing gamma ray irradiation and annealing sequentially experiment device and simultaneously experiment device (Si-ED) are studied and compared. Experiments demonstrate that the Si-ED irradiated with gate bias (+12 V) has a lower oxide-trapped charges increment ( $Delta {N}_{ ext {ot}})$ and higher interface states increment ( $Delta {N}_{ ext {it}})$ , compared to those of sequential experiment device (Se-ED). However, for Si-ED irradiated with drain bias (200 V), it shows lower $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ than those of Se-EDs, which is similar to that observed in the case of devices irradiated with three-terminal bias (200-V drain bias, −10-V gate bias, and source grounded). In addition, for all cases, it is seen that the drain-biased devices own a larger $Delta {N}_{ ext {ot}}$ but a smaller $Delta {N}_{ ext {it}}$ , compared to those of gate-biased ones, and the three-terminal-biased devices show the lowest, especially in Si-ED. As a result, the variations of $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ could cause different degradations of threshold voltage, breakdown voltage, leakage current, and ON-state resistance of devices, which would inevitably threaten the proper functioning of electrical systems. Moreover, in this article, it is concluded that the existing standard, i.e., accelerated annealing after irradiation, cannot reflect the actual radiation reliability of devices. Other evaluation methods regarding total ionizing dose (TID) need to be further explored comprehensively.

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Impact of Gamma Irradiation Effects on IGBT and Design Parameter Considerations

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

Degradation in super-junction MOSFET under successive exposure of heavy ion strike and gamma ray irradiation

High-energy X-Ray Radiation Effects on the Exfoliated Quasi-Two-dimensional Β-Ga2o3 Nanoflake Field-Effect Transistors

Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Experimental Assessment and Analysis of the Influence of Radiation on Through-silicon Vias

Gamma-Ray Irradiation Induced Dielectric Loss of SiO 2 /Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Simulating Threshold Voltage Shift of MOS Devices Due to Radiation in the Low-dose Range