Abstract:This work analytically models the crucial physical mechanisms accountable for the defect kinetics and the degradation of base current in PNP BJTs. Both the space charge and bimolecular mechanisms have been incorporated to elicit the defect dynamics (oxide charge and interface trap) following ionization radiation. Thereafter, two novel insights into the ionization damage on SiO2 of bipolar structure are provided, which includes the coupled effect of the two defect mechanisms and the existence of an “additional” hydrogen sensitivity in the bimolecular mechanism. A previous device model has been updated to describe the response of base current degradation to defects build-up. Further, a closed-form compact expression for the excess base current is provided, which is an explicit function of the total ionizing dose, dose rate, and hydrogen concentration. The new model closely fits the experimental data from several devices, including RF25 capacitor, gate controlled lateral PNP BJT, and LM124 amplifier. Our model delivers a practical approach to deduct the oxide charge modulation effect on excess base current. Thereafter, the relation between the modified excess base current and total ionizing dose is linear. Furthermore, this work suggests a practical approach, called as “offset current approach”, to predict the excess base in PNP BJTs at low dose rate.

Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation

Degradation mechanisms of current gain in NPN transistors

Radiation Effects on Bipolar Junction Transistors Induced by 25 Mev Carbon Ions

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Radiation effects on silicon bipolar transistors caused by 3–10 MeV protons and 20–60 MeV bromine ions

Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons

The Influence of Bias Conditions on Ionizing Radiation Damage of NPN and PNP Transistors?

Effect of Bias Condition on Heavy Ion Radiation in Bipolar Junction Transistors

Effect of displacement radiation damage on bipolar junction transistors under various bias conditions

Combined Radiation Effects of Protons and Electrons on NPN Transistors

Current Gain Degradation Model of Displacement Damage for Drift BJTs

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

The reliability of SiGe HBT under swift heavy ion irradiation

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Simultaneous and Sequential Radiation Effects on Npn Transistors Induced by Protons and Electrons

Analytical Model for Total Ionizing Dose-Induced Excess Base Current in PNP BJTs

Bias Influence on Ionizing Radiation Effects for 3CG130 PNP Bipolar Junction Transistors

Incident particle range dependence of radiation damage in a power bipolar junction transistor