Abstract:Wide-gap semiconductor SiC is generally considered as a superior candidate for high-radiation applications, due to its higher displacement energy for both Si and C lattice atoms. In this work, we find that the current gain (β) of 4H-SiC bipolar junction transistors (BJTs) can severely deteriorate after neutron irradiation. Deep-level transient spectroscopy (DLTS) reveals that two major carrier-killer centers, Z1/2 and EH6/7, were produced in neutron-irradiated devices. Surprisingly, we find that the shallow Z1/2 center can play a dominant role over the deep EH6/7 defects in carrier recombination under high-injection conditions, which contributes to the unusual smaller hole capture cross section than that of the electron one, as indicated by the first-principles calculations. Finally, technology computer aided design (TCAD) simulation confirms that the enhanced carrier recombination from the Z1/2 centers is responsible for the degraded performance of SiC BJTs after irradiation. Our findings not only provide a deep insight into the underlying physics for displacement damage in SiC BJTs, but also are of interest for technological applications field related to high-energy particle irradiation or implantation.

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

The reliability of SiGe HBT under swift heavy ion irradiation

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion.

Electrical performance of electron irradiated SiGe HBT and SiBJT

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Bias Dependence of Ionizing Radiation Damage in Sige Hbts at Different Dose Rates

Electrical Performance Analysis of Electron Irradiated SiGe HBT and Si BJT

Irradiation Effects on DC Current Gain of SiGe HBT

Comparison of Neutron Irradiation Effects on the Electrical Performances of Sige Hbt and Si Bjt

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Effects of Co-60 Gamma-Ray Irradiation on the DC and RF Characteristics of SiGe HBTs