Abstract:The effect of bias condition on total ionizing dose (TID) of Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated, cutoff, and all-grounded biases during $^{60}{\hbox{Co}}\gamma $ irradiation. After each irradiation stops, the forward Gummel characteristic and inverse Gummel characteristic are measured, and a 3-D simulation of TID for SiGe HBT is performed. The mechanism of TID in different bias conditions is obtained by analyzing normalized excess base current. The results show that the TID damages are different at various irradiation biases of the SiGe HBT, and the worst bias between forward and inverse Gummel characteristics exhibits inconsistently. The reason could be attributed to different defects produced and accumulated in oxide layers by irradiation at various bias conditions. To be specific, the oxide trap charges ( ${{\hbox{N}}_{\rm ot}}$ ) in emitter/base (E/B) Spacer is important to the forward Gummel characteristic, yet the ${{\hbox{N}}_{\rm ot}}$ in LOCOS determines the inverse Gummel characteristic. However, after long time irradiation, the interface states ( ${{\hbox{N}}_{\rm it}}$ ) both in E/B Spacer and LOCOS dominate the damage to the SiGe HBT despite in forward Gummel mode or inverse Gummel mode.

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion.

Bias Dependence of Ionizing Radiation Damage in Sige Hbts at Different Dose Rates

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{co}}\gamma $ in SiGe HBT

Impact of Bias Conditions on Total Ionizing Dose Effects of &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$^{60}{\hbox{co}}\gamma $&Lt;/tex-Math> &Lt;/inline-Formula> in SiGe HBT

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

The reliability of SiGe HBT under swift heavy ion irradiation

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Effect of Bias Condition on Heavy Ion Radiation in Bipolar Junction Transistors

Electrical performance of electron irradiated SiGe HBT and SiBJT

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Bias Influence on Ionizing Radiation Effects for 3CG130 PNP Bipolar Junction Transistors

Dlts Studies of Bias Dependence of Defects in Silicon Npn Bipolar Junction Transistor Irradiated by Heavy Ions

Irradiation Effects on DC Current Gain of SiGe HBT

Electrical Performance Analysis of Electron Irradiated SiGe HBT and Si BJT

Bias Dependence of Synergistic Radiation Effects Induced by Electrons and Protons on Silicon Bipolar Junction Transistors