Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices
Zhenhua Liu,Xiaofeng Huang,Lihua Mo,Zhiliang Hu,Mao Lin,Lina Qi,Haibin Wang
DOI: https://doi.org/10.1016/j.microrel.2024.115326
IF: 1.6
2024-01-28
Microelectronics Reliability
Abstract:Insulated gate bipolar transistor (IGBT) is a bipolar gate-controlled device with high blocking voltage, current density, and switching frequency. The inverters composed of IGBTs can be used in the power system of spacecraft for power control and distribution. However, in the space environment, cosmic rays such as protons and γ-ray, may cause the total ionizing dose (TID) effects on IGBT, reducing its performance and even leading to degradation of the safe operating area (SOA). Many researches have focused on the impact of γ-ray. However, there are few studies on TID effects induced by proton irradiation. Also, previous studies mainly focused on the degradation of IGBT electrical characteristics caused by the TID effects. To the best knowledge of authors, there is no report on the impact of TID effects on the SOA of IGBT. In this article, in order to investigate the degradation of IGBT induced by proton irradiation, we conducted the proton irradiation experiment on commercially available 1200 V/40 A trench field-stop IGBT (TFS-IGBT) with different irradiation fluence. By using TCAD simulations, a 2D TFS-IGBT model has been set up to simulate and analyze the impact on switching characteristics and SOA. Both experimental and simulation results indicate that the proton irradiation leads to the degradation of the electrical characteristics of the IGBT, such as the negative shift of the threshold voltage , the increase of collector-emitter leakage current , and the decrease of collector-emitter breakdown voltage. Meanwhile, the short-circuit characteristics of IGBT have severely degraded, while the reverse bias safe operating area (RBSOA) has not significantly changed.
engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied